List of Publications
Dr. Stefan Zollner

December 20, 2024

Refereed Journal Articles and Full-length Conference Proceeding Papers

  1. U. Cebulla, S. Zollner, A. Forchel, S. Subbanna, G. Griffiths, and H. Kroemer, Hot carrier relaxation and recombination in GaSb/AlSb quantum wells, Solid-State Electron. 31, 507-510 (1988).
  2. S. Zollner, Sudha Gopalan, M. Garriga, J. Humlíček, and M. Cardona, Influence of deformation potential electron-phonon interaction on the optical transitions and intervalley scattering in III-V- semiconductors, in 19th International Conference on the Physics of Semiconductors, Warsaw, 1988, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988), Vol. 2, p. 1513-1516.
  3. S. Zollner, Sudha Gopalan, and M. Cardona, Intervalley deformation potentials and scattering rates in zincblende semiconductors, Appl. Phys. Lett. 54, 614-616 (1989).
  4. S. Zollner, C. Lin, E. Schönherr, A. Böhringer, and M. Cardona, The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry, J. Appl. Phys. 66, 383-387 (1989).
  5. S. Zollner, J. Kircher, M. Cardona, and Sudha Gopalan, Are transverse phonons important for ΓX - intervalley scattering in GaP ?, Solid-State Electron. 32, 1585-1589 (1989).
  6. S. Zollner, Sudha Gopalan, and M. Cardona, Microscopic theory of intervalley scattering in GaAs: k -dependence of intervalley deformation potentials, in Phonons 89. Proceedings of the Third International Conference on Phonon Physics and the Sixth International Conference on Phonon Scattering in Condensed Matter, edited by S. Hunklinger, W. Ludwig, and G. Weiss, (World Scientific, Singapore, 1990), Vol. 2, p. 787-789.
  7. M. Ingels, M. Stutzmann, and S. Zollner, Optical properties of microcrystalline silicon, in Materials Issues in Microcrystalline Semiconductors, edited by P. M. Fauchet, K. Tanaka, and C. C. Tsai, (Materials Research Society, Pittsburgh, 1990), p. 229-233.
  8. S. Zollner, Sudha Gopalan, and M. Cardona, Intervalley scattering times from the rigid-pseudoion method, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III, edited by R. R. Alfano, Proc. SPIE 1282, 78-85 (1990).
  9. S. Zollner, Sudha Gopalan, and M. Cardona, Microscopic theory of intervalley scattering in GaAs: k -dependence of deformation potentials and scattering rates, J. Appl. Phys. 68, 1682-1693 (1990).
  10. M. Cardona and S. Zollner, Intra- and intervalley deformation potentials for electrons in GaAs, in Properties of Gallium Arsenide, EMIS Datareview Series No. 2, 2nd edition, (INSPEC, London, 1990), p. 126-138.
  11. S. Zollner, U. Schmid, N. E. Christensen, C. Grein, M. Cardona, and L. Ley, LMTO and EPM calculations of strained valence bands in GaAs and InAs, in 20th International Conference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos, (World Scientific, Singapore, 1990), Vol. 3, p. 1735-1738.
  12. J. Fraxedas, S. Zollner, L. Ley, A. Stampfl, R. C. G. Leckey, and J. D. Riley, Angle resolved constant initial state spectroscopy of GaAs, in 20th International Conference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos, (World Scientific, Singapore, 1990), Vol. 3, p. 1751-1754.
  13. S. Zollner, U. Schmid, N. E. Christensen, and M. Cardona, Conduction-band minima of InP: Ordering and absolute energies, Appl. Phys. Lett. 57, 2339-2341 (1990).
  14. S. Zollner, S. Gopalan, M. Garriga, J. Humlíček, L. Viña, and M. Cardona, Ultrafast initial relaxation of hot electrons and holes in tetrahedral semiconductors via deformation potential interaction: Theory and experiment, Appl. Phys. Lett. 57, 2838-2840 (1990).
  15. S. Zollner, S. Gopalan, and M. Cardona, Effective deformation potentials in the description of time-resolved and hot-electron luminescence, Solid-State Commun. 76, 877-879 (1990).
  16. S. Zollner, M. Garriga, J. Humlíček, S. Gopalan, and M. Cardona, Temperature dependence of the dielectric function and the interband critical-point parameters of GaSb, Phys. Rev. B 43, 4349-4360 (1991).
  17. C. H. Grein, S. Zollner, and M. Cardona, Microcopic theory of second-order Raman scattering in silicon under uniaxial stress, Phys. Rev. B 43, 6633-6641 (1991).
  18. S. Zollner, S. Gopalan, and M. Cardona, The temperature dependence of the band gaps in InP, InAs, InSb, and GaSb, Solid-State Commun. 77, 485-488 (1991).
  19. C. H. Grein, S. Zollner, and M. Cardona, Calculation of the intervalley scattering rates in AlxGa1−xAs: Effects of alloy and phonon scattering, Phys. Rev. B 44, 12761-12768 (1991).
  20. S. Zollner, S. Gopalan, and M. Cardona, Microscopic theory of intervalley scattering in InP, Phys. Rev. B 44, 13446-13451 (1991).
  21. M. Cardona, C. H. Grein, H. D. Fuchs, and S. Zollner, Isotope effects on the electronic excitations and phonons in semiconductors, J. Non-Crystalline Solids 141, 257-264 (1992).
  22. K. Pierz, M. Stutzmann, S. Zollner, W. Beyer, and C. Brillerty, Structural properties of Li-doped hydrogenated amorphous silicon, J. Non-Crystalline Solids 137&138, 107-110 (1991).
  23. S. Zollner, S. Gopalan, and M. Cardona, Short-range deformation-potential interaction and its application to ultrafast processes in semiconductors, Semicond. Sci. Techn. 7, B137-B143 (1992).
  24. S. Zollner, M. Cardona, and S. Gopalan, Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors, Phys. Rev. B 45, 3376-3385 (1992).
  25. S. Zollner, C. H. Grein, and M. Cardona, Alloy versus phonon contributions to intervalley scattering, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors IV, edited by R. R. Alfano, Proc. SPIE 1677, 75-84 (1992).
  26. S. Zollner, R. T. Collins, M. S. Goorsky, P. J. Wang, M. J. Tejwani, J. O. Chu, and B. S. Meyerson, Photoluminescence from pseudomorphically strained Si1−xGex/Si quantum wells grown on silicon, in Spectroscopic Characterization Techniques for Semiconductor Technology IV, edited by O. J. Glembocki, Proc. SPIE 1678, 81-88 (1992).
  27. K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang, and F. K. LeGoues, Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy system, Appl. Phys. Lett. 60, 3033-3035 (1992).
  28. M. A. Tischler, R. T. Collins, J. C. Tsang, J. H. Stathis, J. L. Batstone, and S. Zollner, Optical Characteristics of porous silicon, in Light Emission from Silicon, edited by S. S. Iyer, R. T. Collins, and L. T. Canham, (Materials Research Society, Pittsburgh, 1992), Mat. Res. Soc. Symp. Proc. 256, 189-195.
  29. J. C. Tsang, K. Eberl, S. Zollner, and S. S. Iyer, Raman spectroscopy of CySi1−y alloys grown by molecular beam epitaxy, Appl. Phys. Lett. 61, 961-963 (1992).
  30. S. Zollner, M. Cardona, and S. Gopalan, Erratum: Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors, Phys. Rev. B 46, 7337 (1992).
  31. M. K. Kelly, S. Zollner, and M. Cardona, Modelling the optical response of surfaces measured by spectroscopic ellipsometry: Application to Si and Ge, Surf. Sci. 285, 282 (1993).
  32. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey, Determination of conduction band states in GaAs, InP, and InAs (110), Phys. Rev. B 47, 12625-12635 (1993).
  33. S. Zollner, M. Garriga, J. Kircher, J. Humlíček, M. Cardona, and G. Neuhold, Temperature dependence of the dielectric function and the interband critical-point parameters of GaP, Thin Solid Films 233, 185-188 (1993).
  34. S. Zollner, M. Garriga, J. Kircher, J. Humlíček, M. Cardona, and G. Neuhold, Temperature dependence of the dielectric function and the interband critical-point parameters of GaP, Phys. Rev. B 48, 7915-7929 (1993).
  35. S. Zollner, Model dielectric functions for native oxides on compound semiconductors, Appl. Phys. Lett. 63, 2523-2524 (1993).
  36. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey, Conduction-band states in GaSb(110) and GaP(110) at the Brillouin zone center, Phys. Rev. B 48, 14301-14308 (1993).
  37. S. Zollner, Selecting an Operating System, Part I: OS/2 2.X, Computers in Physics 8, 152-160 (1994). Times cited: 1
  38. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), Solid State Commun. 96, 305-308 (1995).
  39. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey, Conduction-band states and surface core excitons in InSb(110) and other III-V compounds, Phys. Rev. B 50, 7384-7388 (1994).
  40. J. M. Haisch, S. Zollner, K. G. Jensen, K. Myers, and W. S. Gornall, Characterization of femtosecond Ti:sapphire laser pulses with a commercial wavelength meter, Proceedings of the South Dakota Academy of Science 74, 141-148 (1995).
  41. S. Zollner, Theory of optical interband transitions in strained Si1−yCy alloys grown pseudomorphically on Si (001), J. Appl. Phys. 78, 5209-5211 (1995).
  42. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Spectroscopic Ellipsometry and Band Structure of Si1−yCy alloys grown pseudomorphically on Si (001), in Strained-Layer Epitaxy – Materials, Processing, and Device Applications, edited by E. A. Fitzgerald, J. Hoyt, K.-Y. Cheng, and J. Bean (Materials Research Society, Pittsburgh, 1995), Mat. Res. Soc. Symp. Proc. 379, 205-210.
  43. S. Zollner, K. E. Junge, and R. Lange, On the origin of extra peaks in the dielectric function of Si1−x−yGexCy alloys grown pseudomorphically on Si(001), The Fifth Annual Iowa Space Conference, Cedar Falls, IA, October 28, 1995.
  44. S. Zollner, K. E. Junge, R. Lange, and A. A. Affolder, Comment on “Optical Characterization of Si1−xCx/Si (0≤ x ≤0.014) Semiconductor Alloys”, Jpn. J. Appl. Phys. 35, 5684-5685 (1996). Times cited: 3
  45. R. Lange, K. E. Junge, S. Zollner. S. S. Iyer, A. P. Powell, and K. Eberl, Dielectric response of strained and relaxed Si1−x−yGexCy alloys grown by MBE on Si (001), J. Appl. Phys. 80, 4578-4586 (1996). Times cited: 29
  46. K. D. Myers, S. Zollner, R. Lange, K. G. Jensen, J. M. Dolan, D. W. Bailey, and C. J. Stanton, Femtosecond time-resolved reflectivity of Ge, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann, (World Scientific Singapore, 1996), p. 673-676.
  47. S. Zollner, K. D. Myers, K. G. Jensen, J. M. Dolan, D. W. Bailey, and C. J. Stanton, Femtosecond interband hole scattering in Ge studied by pump-probe reflectivity, Solid State Commun. 104, 51-55 (1997). Times cited: 14
  48. S. Zollner and M. Cardona, Intra- and Intervalley deformation potentials in GaAs, in Properties of Gallium Arsenide, edited by M. R. Brozel and G. E. Stillman, EMIS Datareview Series No. 16, 3rd edition, (Institute of Electrical Engineers, Stevenage, Hertfordshire, UK, 1996).
  49. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey, Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, Appl. Phys. Lett. 69, 4084-4086 (1996). Times cited: 10
  50. Stefan Zollner, Growth and characterization of Si1−x−yGexCy alloys for use in heterojunction bipolar transistors, The Sixth Annual Iowa Space Conference, Ames, IA, November 8-9, 1996.
  51. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey, Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, The Sixth Annual Iowa Space Conference, Ames, IA, November 8-9, 1996.
  52. R. Lange, K. E. Junge, S. Zollner. S. S. Iyer, A. P. Powell, and K. Eberl, Dielectric response of strained and relaxed Si1−x−yGexCy, The Sixth Annual Iowa Space Conference, Ames, IA, November 8-9, 1996.
  53. S. Zollner, K. D. Myers, J. M. Dolan, D. W. Bailey, and C. J. Stanton, Theory of femtosecond ellipsometry in Ge at 1.5 eV, Thin Solid Films 313-314, 568-573 (1998). Times cited: 7
  54. S. J. Lee, R. Lange, S. Hong, S. Zollner, P. C. Canfield, A. F. Panchula, B. N. Harmon, and D. W. Lynch, Theoretical and experimental determination of optical and magneto-optical properties of LuFe2 single crystal, Thin Solid Films 313-314, 222-227 (1998). Times cited: 6
  55. K. E. Junge, N. R. Voss, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, D. A. Hits, B. A. Orner, R. Jonczyk, and J. Kolodzey, Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys, Thin Solid Films 313-314, 172-176 (1998). Times cited: 1
  56. R. Lange, S. J. Lee, D. W. Lynch, P. C. Canfield, B. N. Harmon, and S. Zollner, Ellipsometric and Kerr effect studies of Pt3−TM (TM=Mn, Co), Phys. Rev. B 58, 351-358 (1998). Times cited: 30
  57. S. Zollner and J. N. Hilfiker, Ellipsometric Studies of Bulk 4H and 6H SiC Substrates, phys. stat. solidi (a) 166, R9 (1998). Times cited: 6
  58. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater, W. M. Paulson, and C. Feng, Optical studies of phosphorus-doped poly-Si films, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler, A.C. Diebold, W.M. Bullis, T.J. Shaffner, R. McDonald, and E.J. Walters, (American Institute of Physics, Woodbury, NY, 1998), p. 298-302.
  59. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater, W. M. Paulson, and C. Feng, Raman and spectroscopic ellipsometry studies of phosphorus-doped poly-silicon films, in Amorphous and Microcrystalline Silicon Technology-1998, edited by R. Schropp, H.M. Branz, M. Hack, I. Shimizu, and S. Wagner, (Materials Research Society, Pittsburgh, 1998), p. 957-962. Times cited: 1
  60. K.E. Junge, R. Lange, J. M. Dolan, S. Zollner, J. Humlíček, M. Dashiell, D. A. Hits, B. A. Orner, and J. Kolodzey, Ellipsometry studies, optical properties, and band stucture of Ge1−yCy, Ge-rich Si1−x−yGexCy, and boron-doped Si1−xGex alloys, in Epitaxy and Applications of Si-Based Heterostructures, edited by E.A. Fitzgerald, D.C. Houghton, and P.M. Mooney, (Materials Research Society, Pittsburgh, 1998), p. 125-129. Times cited: 1
  61. R. Liu, S. Zollner, M. Liaw, D. O’Meara, and N. Cave, Raman spectroscopy of epitaxial Si/Si1−xGex heterostructures, in Epitaxy and Applications of Si-Based Heterostructures, edited by E.A. Fitzgerald, D.C. Houghton, and P.M. Mooney, (Materials Research Society, Pittsburgh, 1998), p. 63-68. Times cited: 1
  62. S. Zollner, J. P. Carrejo, T. E. Tiwald, and J. A. Woollam, The origin of the Berreman effect in SiC homostructures, phys. stat. solidi (b) 208, R3 (1998). Times cited: 10
  63. S. Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, and J. N. Hilfiker, Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of epitaxial 3C SiC on Si, J. Appl. Phys. 85, p. 8353-8361 (1999). Times cited: 57
  64. H. M. Liaw, S. Q. Hong, P. Fejes, D. Werho, H. Tompkins, S. Zollner, S.R. Wilson, K. J. Linthicum, and R. F. Davis, 3C-SiC buffer layers converted from Si at a low temperature, in Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications-1999, edited by S. C. Binari, A. A. Burk, M. R. Melloch, and C. Nguyen, (Materials Research Society, Pittsburgh, 1999), 219-224. Times cited: 1
  65. S. Zollner, A. Konkar, R.B. Gregory, S. R. Wilson, S.A. Nikishin, and H. Temkin, Dielectric function of AlN grown on Si (111) by MBE, in Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications-1999, edited by S. C. Binari, A. A. Burk, M. R. Melloch, and C. Nguyen, (Materials Research Society, Pittsburgh, 1999), 231-236. Times cited: 5
  66. S. Q. Hong, H. M. Liaw, K. Linthicum, R. F. Davis, P. Fejes, S. Zollner, M. Kottke, and S. R. Wilson, Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer-layers, in Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications-1999, edited by S. C. Binari, A. A. Burk, M. R. Melloch, and C. Nguyen, (Materials Research Society, Pittsburgh, 1999), 407-412.
  67. T.E. Tiwald, J.A. Woollam, S. Zollner, J. Christiansen, R.B. Gregory, T. Wetteroth, S.R. Wilson, and A.R. Powell, Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry, Phys. Rev. B 60, 11464-11474 (1999). Times cited: 83
  68. S. Zollner, R. Liu, A. Konkar, J. Gutt, S.R. Wilson, T.E. Tiwald, J.A. Woollam, and J.N. Hilfiker, Dielectric function of polycrystalline SiC from 190 nm to 15 μm, Phys. Status Solidi (b) 215, p. 21-25 (1999). Times cited: 1
  69. S.A. Nikishin, V.G. Antipov, S. Francouer, N.N. Faleev, G.A. Seryogin, V.A. Elyukhin, H. Temkin, T.I. Prokofyeva, M. Holtz, A. Konkar, S. Zollner, High quality AlN grown on Si(111) by gas source molecular beam epitaxy with ammonia, Appl. Phys. Lett. 75, p. 484-486 (1999). Times cited: 71
  70. S. Zollner, T.-C. Lee, K. Noehring, A. Konkar, N.D. Theodore, W.M. Huang, D. Monk, T. Wetteroth, S.R. Wilson, and J.N. Hilfiker, Thin-film metrology of silicon-on-insulator materials, Appl. Phys. Lett. 76, 46-48 (2000). Times cited: 8
  71. H.M. Liaw, R. Doyle, P.L. Fejes, S. Zollner, A. Konkar, K.J. Linthicum, T. Gehrke, and R.F. Davis, Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates, Solid-State Electronics 44, p. 747-755 (2000). Times cited: 22
  72. A. Demkov, R. Liu, S. Zollner, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filipiak, L.C. McIntyre, and M.D. Ashbaugh, Theoretical and experimental analysis of the low dielectric constant of fluorinated silica, in Optical Properties of Materials, edited by E.L. Shirley, J.R. Chelikowsky, S.G. Louie, and G. Martinez, (Materials Research Society, Pittsburgh, 2000), 255-260. Times cited: 3
  73. S. Zollner, A.A. Demkov, R. Liu, P.L. Fejes, R.B. Gregory, P. Alluri, J. Curless, Z. Yu, J. Ramdani, R. Droopad, T.E. Tiwald, J.N. Hilfiker, J.A. Woollam, Optical properties of bulk and thin-film SrTiO3 on Si and Pt, J. Vac. Sci. Technol. B 18, 2242-2254 (2000). Times cited: 80
  74. S. Zollner, Ellipsometry of platinum films on silicon, phys. stat. solidi (a) 177, R7-8 (2000). Times cited: 1
  75. S. Zollner, J. Hildreth, R. Liu, P. Zaumseil, M. Weidner, and B. Tillack, Optical constants and ellipsometric thickness determination of strained Si1−x−yGex:C layers on Si (100) and related heterostructures, J. Appl. Phys. 88, 4102-4108 (2000). Times cited: 28
  76. S. Zollner, Optical properties and band structure of unstrained and strained Si1−xGex and Si1−x−yGexCy alloys, in Silicon-Germanium Carbon Alloys. Growth, Properties and Applications, edited by S. Pantelides and S. Zollner, pp. 387-444, (Taylor and Francis, New York, 2002).
  77. M. Holtz, W.M. Duncan, S. Zollner, and R. Liu, Visible and ultraviolet Raman scattering studies of Si1−xGex alloys, J. Appl. Phys. 88, 2523-2528 (2000). Times cited: 85
  78. S. Zollner, A.A. Demkov, R. Liu, J.A. Curless, Z. Yu, J. Ramdani, and R. Droopad, Optical properties of thin-film SrTiO3 on Si grown by MBE, in Recent Developments in Oxide and Metal Epitaxy - Theory and Experiment, edited by M. Yeadon, S. Chiang, R.F.C. Farrow, J.W. Evans, and O. Auciello, (Materials Research Society, Pittsburgh, 2000), 167-171.
  79. A. Demkov, S. Zollner, R. Liu, D. Werho, M. Kottke, R.B. Gregory, M. Angyal, S. Filipiak, and G.B. Adams, Theoretical and experimental analysis of the low dielectric constant of fluorinated silica, in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, edited by G.S. Oehrlein, K. Maex,Y.-C. Joo, S. Ogawa, and J.T. Wetzel, (Mat. Res. Soc., Pittsburgh, 2001), pp. 1-6.
  80. T. Prokofyeva, M. Seon, J. Vanbuskirk, M. Holtz, S.A. Nikishin, N.N. Faleev, H. Temkin, and S. Zollner, Vibrational properties of AlN grown on silion (111), Phys. Rev. B 63, 125313-1 (2001). Times cited: 144
  81. S. Zollner and E. Apen, Optical constants for metrology of hydrogenated amorphous silicon-nitrogen alloys on Si, in Characterization and Metrology for ULSI Technology 2000, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis, P.J. Smith, and E.M. Secula, (American Institute of Physics, Melville, NY, 2001), p. 532-537. Times cited: 5
  82. S. Lu, M. Kottke, S. Zollner, and W. Chen, High depth resolution secondary ion mass spectrometry analysis of Si1−xGex:C HBT structures, in Characterization and Metrology for ULSI Technology 2000, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, W.M. Bullis, P.J. Smith, and E.M. Secula, (American Institute of Physics, Melville, NY, 2001), p. 672-676.
  83. S. Zollner, A. Konkar, R. Liu, M. Canonico, Q. Xie, G.F. Grom, Q. Zhu, R. Krishnan, P.M. Fauchet, and L. Tsybeskov, Optical and structural characterization of nanocrystalline silicon superlattices: Toward nanoscale silicon metrology, in Microcrystalline and Nanocrystalline Semiconductors 2000, edited by P.M. Fauchet, J.M. Buriak, L.T. Canham, N. Koshida, and B.E. White, (Mat. Res. Soc., Pittsburgh, 2001), pp. F5.1.1-6. Times cited: 1
  84. S. Zollner and D. Zarr, Optical constants of GaAs from 0.7 to 6.6 eV for thickness metrology in compound semiconductor manufacturing, in 2000 IEEE International Symposium on Compound Semiconductors, edited by M. Melloch and M.A. Reed, (IEEE, Piscataway, NJ, 2000), p. 13-18.
  85. M. Holtz, T. Prokofyeva, M. Seon, J. Vanbuskirk, K. Copeland, S.A. Nikishin, N.N. Faleev, H. Temkin, S. Zollner, and A. Konkar, Vibrational and optical properties of AlN on Si(111) using gas-source molecular beam epitaxy, in 2000 IEEE International Symposium on Compound Semiconductors, edited by M. Melloch and M.A. Reed, (IEEE, Piscataway, NJ, 2000), p. 251-256.
  86. S. Zollner, Critical-point parameters and optical constants of GaAs from 0.73 to 6.60 eV by spectroscopic ellipsometry, J. Appl. Phys. 90, 515-517 (2001). Times cited: 51
  87. R. Liu, S. Zollner, P. Fejes, R. Gregory, S. Lu, K. Reid, D. Gilmer, B.-Y. Nguyen, J. Yu, R. Droopad, J. Curless, A. Demkov, J. Finder, and K. Eisenbeiser, Materials and physical properties of novel high-k and medium-k gate dielectrics, in Gate Stack and Silicide Issues in Silicon Processing II, edited by S.A. Campbell, L. Clevenger, P.B. Griffin, and C.C. Hobbs, (Mat. Res. Soc., Pittsburgh, 2002), pp. K1.1.1-12. Times cited: 2
  88. J. Taraci, S. Zollner, M.R. McCartney, J. Menendez, D.J. Smith, J. Tolle, M. Bauer, E. Duda, N.V. Edwards, and J. Kouvetakis, Optical, vibrational, and structural properties of Ge-Sn alloys by UHV-CVD, in Progress in Semiconductor Materials for Optoelectronic Applications, edited by E.D. Jones, O. Manasreh, K.D. Choquette, D.J. Friedman, and D.K. Johnstone, Mat. Res. Soc. Proc. 692, p. 631-636, (Mat. Res. Soc., Warrendale, PA, 2002).
  89. J. Taraci, S. Zollner, M.R. McCartney, J. Menendez, M.A. Santana-Aranda, D.J. Smith, A. Haaland, A.V. Tutukin, G. Gunderson, G. Wolf, and J. Kouvetakis, Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods, J. Am. Chem. Soc. 123, 10980-10987 (2001). Times cited: 20
  90. N.V. Edwards, O.P.A. Lindquist, L.D. Madsen, S. Zollner, K. Järrehdahl, C. Cobet, S. Peters, N. Esser, A. Konkar, and D.E. Aspnes, Determination and critical assessment of the optical properties of common substrate materials used in III/V nitride heterostructures with vacuum ultraviolet spectroscopic ellipsometry, in GaN and Related Alloys - 2001, edited by J.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, and H. Riechert, Mat. Res. Soc. Proc. 693, p. 509-514 (Mat. Res. Soc., Warrendale, PA, 2002).
  91. N.V. Edwards, J. Vella, Q. Xie, S. Zollner, I. Adhihetty, R. Liu, T.E. Tiwald, C. Russell, J. Vires and K.H. Junker, Spectroscopic ellipsometry as a potential in-line optical metrology tool for relative porosity measurements of low-k dielectric films, in Surface Engineering 2001 - Fundamentals and Applications, edited by W.J. Meng, A. Kemar, G.L. Doll, Y.T. Cheng, S. Veprek, T.-W. Chung, Mat. Res. Soc. Proc. 697, p. 101-106 (Mat. Res. Soc., Warrendale, PA, 2002). Times cited: 1
  92. T. Wagner, J.N. Hilfiker, T.E. Tiwald, C.L. Bungay, and S. Zollner, Materials characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry, phys. stat. solidi (a) 188, 1553 (2001). Times cited: 9
  93. S. Zollner, M.G. Sadaka, N.V. Edwards, C.S. Cook, Q. Xie, H.T. Le, J. Hildreth, and A.S. Morton, In-line optical and x-ray measurements of thickness and composition for manufacturing of heterostructure bipolar transistors, GaAs MANTECH Conference, April 8-11, 2002, San Diego, CA, Digest of papers, page 187-190.
  94. M. Bauer, J. Taraci, J. Tolle, A.V.G. Chizmeshya, S. Zollner, D.J. Smith, J. Menendez, C. Hu, and J. Kouvetakis, Ge-Sn semiconductors for band-gap and lattice engineering, Appl. Phys. Lett. 81, 2992-2994 (2002). Times cited: 179
  95. M.R. Bauer, J. Tolle, A.V.G. Chizmeshya, S. Zollner, J. Menendez, and J. Kouvetakis, New Ge-Sn materials with adjustable bandgaps and lattice constants, in Progress in Semiconductors II - Electronic and Optoelectronic Applications, edited by B.D. Weaver, M. O. Manasreh, C. Jagadish, and S. Zollner, (Mat. Res. Soc., Warrendale, PA, 2003), p. 49-54. Times cited: 5
  96. J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, R. Rai, J. Baker, and S. Voight, HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium, J. Electrochem. Soc. 150, F67-74 (2003). Times cited: 52
  97. Q. Xie, R. Liu, X.-D. Wang, M. Canonico, E. Duda, S. Lu, C. Cook, A.A. Volinsky, S. Zollner, S.G. Thomas, T. White, A. Barr, M. Sadaka, and B.-Y. Nguyen, Characterization techniques for evaluating strained Si CMOS materials, in Characterization and Metrology for ULSI Technology, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, S. Zollner, R.P. Khosla, and E.M. Secula, (American Institute of Physics, Melville, NY, 2003), AIP Conf. Proc. 683, 223-227. Times cited: 1
  98. C.S. Cook, T. Daly, R. Liu, M. Canonico, M. Erickson, Q. Xie, R. Gregory, and S. Zollner, Properties, process control, and characterization of PECVD silicon nitrides for compound semiconductor devices, GaAs MANTECH Conference, May 19-22, 2003, Scottsdale, AZ, Digest of papers, page 173-175.
  99. M. Passlack, N. Medendorp, S. Zollner, R. Gregory, and D. Braddock, Optical and electrical properties of GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs, Appl. Phys. Lett. 84, 2521 (2004). Times cited: 21
  100. C.S. Cook, S. Zollner, M.R. Bauer, P. Aella, J. Kouvetakis, and J. Menendez, Optical constants and interband transitions of Ge1−xSnx alloys (x <0.2) grown on Si by UHV-CVD, Thin Solid Films 455-456, 217-221 (2004). Times cited: 23
  101. Candi S. Cook, Terry Daly, Ran Liu, Michael Canonico, Q. Xie, R.B Gregory, and Stefan Zollner, Spectroscopic Ellipsometry for in-line monitoring of silicon nitrides, Thin Solid Films 455-456, 794-797 (2004). Times cited: 8
  102. Stefan Zollner, Ran Liu, A.A. Volinsky, Ted White, Bich-Yen Nguyen, and C.S. Cook, Gate oxide metrology and silicon piezooptics, Thin Solid Films 455-456, 261-265 (2004). Times cited: 5
  103. M.R. Bauer, C.S. Cook, P. Aella, J. Tolle, J. Kouvetakis, P.A. Crozier, A.V.G. Chizmeshya, D.J. Smith, and S. Zollner, SnGe superstructure materials for Si-based optoelectronics, Appl. Phys. Lett. 83, 3489 (2003). Times cited: 36
  104. V. Vasilyev, A. Drehman, H. Dauplaise, L. Bouthilette, M. Roland, A. Volinsky, S. Zollner, and W. Qin, Optical and dielectric properties of Eu- and Y-polytantalate thin films, in Fundamentals of Novel Oxide/Semiconductor Interfaces, edited by C.R. Abernathy, E. Gusev, D. Schlom, and S. Stemmer, Mat. Res. Soc. Symp. Proc. 786, (Mat. Res. Soc., Warrendale, PA, 2003), p. E3.31.1.
  105. P. Aella, C. Cook, J. Tolle, S. Zollner, A.V.G. Chizmeshya, and J. Kouvetakis, Structural and optical properties of SnxSiyGe1−x−y alloys, Appl. Phys. Lett. 84, 888 (2004). Times cited: 63
  106. S. Pozder, J.-Q. Lu, Y. Kwon, S. Zollner, J. Yu, J.J. McMahon, T.S. Cale, K. Yu, and R.J. Gutmann, Back-end compatibility of bonding and thinning processes for a wafer-level 3D interconnect technology platform, Proceedings of the IEEE 2004 International Interconnect Technology Conference Proceedings, (IEEE, Piscataway, NJ, 2004), p. 102-104. Times cited: 32
  107. S. Pozder, M. Canonico, S. Zollner, R. Liu, K. Yu, and J.-Q. Lu, Raman and XRD strain analysis of 3D bonded and thinned SOI wafers, in Physics of Semiconductors, edited by J. Menendez and C.G. Van de Walle, (American Institute of Physics, Melville, NY, 2005), p. 1495-1496.
  108. B.-Y. Nguyen, A. Thean, T. White, A. Barr, Q. Xie, S. Zollner, M. Sadaka, X.-D. Wang, A. Vandooren, L. Mathew, M. Zavala, D. Zhang, D. Eades, Z. Shi, V. Vartanian, S. Thomas, T. Stephen, B. Goolsby, R. Liu, T. Nguyen, V. Dhandapani, J. Jiang, R. Rai, D. Theodore, M. Kottke, R. Gregory, M. Canonico, R. Noble, S. Kalpat, M. Mendicino, M. Orlowski, J. Mogab, and S. Venkatesan, Advanced substrates and devices for nanoscale CMOS, Yield Management Solutions Magazine 6, 48 (2004).
  109. M. Sadaka, M. Zavala, M. Rossow, A. Thean, A. Barr, T. White, V. Vartanian, B.-Y. Nguyen, Q. Xie, X.-D. Wang, M. Kottke, M. Canonico, S. Zollner, and R. Liu, Enhancement of SiGe relaxation for fabrication of SGOI substrates using condensation, in SiGe: Materials, Processes, and Devices, edited by D. Harame, J. Boquet, J. Cressler, D. Houghton, H. Iwai, T.-J. King, G. Masini, J. Murota, K. Rim, and B. Tillack, Electrochem. Soc. Proc. 2004-07, 281-288 (2004).
  110. Stefan Zollner, Wentao Qin, R.B. Gregory, J. Kulik, N.V. Edwards, Kurt Junker, and T.E. Tiwald, Birefringence and VIS/VUV optical absorption of graphite-like amorphous carbon, in Physics of Semiconductors, edited by J. Menendez and C.G. Van de Walle, (American Institute of Physics, Melville, NY, 2005), p. 111-112.
  111. M. Sadaka, A.V.-Y. Thean, A. Barr, D. Tekleab, S. Kalpat, T. White, T. Nguyen, R. Mora, P. Beckage, D. Jawarani, S. Zollner, M. Kottke, R. Liu, M. Canonico, Q.-H. Xie, X.-D. Wang, S. Parsons, D. Eades, M. Zavala, B.-Y. Nguyen, C. Mazure, and J. Mogab, Fabrication and operation of sub-50nm strained Si on Si1−xGex on Insulator (SGOI) CMOSFETs, 2004 IEEE International SOI Conference, Charleston, SC, October 4-7, 2004, p. 209 (2004). Times cited: 11
  112. C.S. Cook, V. D’Costa, P. Aella, J. Tolle, J. Kouvetakis, S. Zollner, and J. Menendez, Compositional dependence of critical point transitions in Ge1−xSnx alloys, in Physics of Semiconductors, edited by J. Menendez and C.G. Van de Walle, (American Institute of Physics, Melville, NY, 2005), p. 65-66. Times cited: 1
  113. B.-Y. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S. Thomas, M. Zavala, Da Zhang, D. Eades, Zhong-Hai Shi, J. Schaeffer, D. Triyoso, S. Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, R. Liu, R. Noble, Thien Nguyen, V. Dhandapani, B. Xie, Xang-Dong Wang, J. Jiang, R. Rai, M. Sadd, M. Ramon, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, M. Orlowski, P. Tobin, J. Mogab, S. Venkatesan, Integration challenges of new materials and device architectures for IC applications, Proceedings of the 2004 International Conference on Integrated Circuit Design and Technology, Austin, TX, 17-20 May 2004, (IEEE, Piscataway, NJ, 2004), p. 237-243. Times cited: 1
  114. S. Zollner, Y. Liang, R. Gregory, P. Fejes, D. Theodore, Z. Yu, D. Triyoso, J. Curless, and C. Tracy, Limits of optical and X-ray metrology applied to thin gate dielectrics, in Characterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (American Institute of Physics, Melville, NY, 2005), AIP Conf. Proc. vol. 788, p. 166-171. Times cited: 1
  115. M. Bauer, S. Zollner, N.D. Theodore, M. Canonico, P. Tomasini, B.Y. Nguyen, and C. Arena, Si3H8 based epitaxy of biaxially stressed silicon films doped with carbon and arsenic for CMOS applications, in Semiconductor Defect Engineering Materials, Synthetic Structures, and Devices , edited by S. Ashok, J. Chevallier, B.L. Soppori, M. Tabe, and P. Kiesel, (Materials Research Society, Warrendale, PA, 2005), pp. 143-148. Times cited: 2
  116. B.-Y. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, D. Triyoso, J. Schaeffer, B. Goolsby, V. Dhandapani, T. Nguyen, V. Vartanian, L. McCormick, D. Theodore, S. Zollner, Q. Xie, X.-D. Wang, M. Canonico, M. Kottke, Z. Shi, L. Mathew, M. Zavala, C. Parker, H. Collard, J. Hildreth, L. Prabhu, R. Rai, S. Murphy, P. Montgomery, S. Kalpat, M. Ramon, A. Demkov, B. Taylor, D. Gilmer, V. Adams, J. Jiang, J. Chen, C.-H. Chang, V. Kaushik, L. Chandna, M. Sadd, A. Barr, A. Vandooren, D. Pham, M. Mendicino, J. Cheek, V. Kolagunta, Hsing Tseng, B. White, P. Tobin, M. Orlowski, S. Venkatesan, and J. Mogab, New materials, processes and device structures for 65nm CMOS technology node and beyond, J. Electrochem. Soc. 501, 637 (2006).
  117. V. Vartanian, M. Sadaka, S. Zollner, A.V.-Y. Thean, T. White, B.-Y. Nguyen, M. Zavala, L. McCormick, L. Prabhu, D. Eades, S. Parsons, H. Collard, K. Kim, J. Jiang, V. Dhandapani, J. Hildreth, R. Powers, G. Spencer, N. Ramani, J. Mogab, M. Kottke, M. Canonico, Q. Xie, X.-D. Wang, J. Vella, L. Contreras, D. Theodore, B. Lu, T. Kriske, R. Gregory, and R. Liu, Metrology Challenges for 45nm Strained-Si Devices, in Characterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (American Institute of Physics, Melville, NY, 2005), AIP Conf. Proc. vol. 788, p. 214-221. Times cited: 5
  118. D.H. Triyoso, R.I. Hegde, S. Zollner, M.E. Ramon, S. Kalpat, R. Gregory, X.-D. Wang, J. Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B.E. White, and P.J. Tobin, Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition, J. Appl. Phys. 98, 54104 (2005). Times cited: 63
  119. V. Vartanian, B.-Y. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, B. Goolsby, V. Dhandapani, L. McCormick, D. Theodore, S. Zollner, Q. Xie, X.-D. Wang, M. Canonico, M. Kottke, Z. Shi, L. Mathew, M. Zavala, C. Parker, H. Collard, J. Hildreth, L. Prabhu, R. Rai, S. Murphy, P. Montgomery, S. Kalpat, M. Ramon, V. Adams, J. Jiang, J. Chen, C.-H. Chang, V. Kaushik, M. Sadd, A. Barr, A. Vandooren, D. Pham, and V. Kolagunta, Channel substrate engineering for the 65 nm CMOS technology node and beyond, Semiconductor Fabtech 26, 75 (2005).
  120. R. Roucka, J. Tolle, C. Cook, A.V.G. Chizmeshya, J. Kouvetakis, V. D’Costa, J. Menendez, Z.D. Chen, and S. Zollner, Versatile buffer layer architectures based on Ge1−xSnx alloys, Appl. Phys. Lett. 86, 191912 (2005). Times cited: 39
  121. D. Zhang, B.-Y. Nguyen, T. White, B. Goolsby, T. Nguyen, V. Dhandapani, J. Hildreth, M. Foisy, V. Adams, Y. Shiho, A. Thean, D. Theodore, M. Canonico, S. Zollner, S. Bagchi, S. Murphy, R. Rai, J. Jiang, M. Jahanbani, R. Noble, M. Zavala, R. Cotton, D. Eades, S. Parsons, P. Montgomery, A. Martinez, B. Winstead, M. Mendicino, J. Cheek, J. Liu, P. Grudowski, N. Ramani, P. Tomasini, C. Arena, C. Werkhoven, H. Kirby, C.H. Chang, C.T. Lin, H.C. Tuan, Y.C. See, S. Venkatesan, V. Kolagunta, N. Cave, and J. Mogab, Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement, 2005 Symposium on VLSI Technology, Kyoto, Japan, June 14-16, 2005, p. 26. Times cited: 30
  122. A.V.Y. Thean, T. White, M. Sadaka, L. McCormick, M. Ramon, R. Mora, P. Beckage, M. Canonico, X.-D. Wang, S. Zollner, S. Murphy, V. Van der Pas, M. Zavala, R. Noble, O. Zia, L.-G. Kang, V. Kolagunta, N. Cave, J. Cheek, M. Mendicino, B.-Y. Nguyen, M. Orlowski, S. Venkatesan, J. Mogab, C.H. Chang, Y.H. Chiu, H.C. Tuan, Y.C. See, M.S. Liang, Y.C. Sun, I. Cayrefourcq, F. Metral, M. Kennard, and C. Mazure, Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology, 2005 Symposium on VLSI Technology, Kyoto, Japan, June 14-16, 2005, p. 134. Times cited: 20
  123. R.I. Hegde, D.H. Triyoso, P.J. Tobin, S. Kalpat, M.E. Ramon, H.-H. Hseng, J.K. Schaeffer, E. Luckowski, W.J. Taylor, C.C. Capasso, D.C. Gilmer, M. Moosa, A. Haggag, M. Raymond, D. Roan, J. Nguyen, L.B. La, E. Hebert, R. Cotton, X.-D. Wang, S. Zollner, R. Gregory, D. Werho, R.S. Rai, L. Fonseca, M. Stoker, C. Tracy, B.W. Chan, Y.H. Chiu, and B.E. White, Jr., Microstructure Modified HfO2 Using Zr Addition with TaxCy Gate for Improved Device Performance and Reliability, International Electron Devices Meeting, 5-7 December 2005, Washington, DC, (IEEE, Piscataway, NJ, 2005), p. 4. Times cited: 17
  124. G. Lucovsky, C.C. Fulton, Y. Zhang, Y. Zhou, J. Luning, L.F. Edge, J.L. Whitten, R.J. Nemanich, H. Ade, D.G. Schlom, V.V. Afanase’v, A. Stesman, S. Zollner, D. Triyoso, and B.R. Rogers, Conduction band-edge states associated with the removal of d-state degeneracies by the Jahn-Teller effect, IEEE Trans. on Device and Materials Reliability 5, 65 (2005). Times cited: 62
  125. J. Schmidt, G. Vogg, F. Bensch, S. Kreuzer, S. Zollner, R. Liu, Q. Xie, and P. Wennekers, Spectroscopic techniques for characterization of high-mobility strained-Si CMOS, Materials Science in Semiconductor Processing 8, 267-271 (2005). Times cited: 14
  126. V. R. d’Costa, C. S. Cook, A. G. Birdwell, C. L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, and J. Menendez, Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny/Ge1−xSix study, Phys. Rev. B 73, 125207 (2006). Times cited: 157
  127. V.R. d’Costa, C.S. Cook, J. Menendez, J. Tolle, J. Kouvetakis, and S. Zollner, Transferability of optical bowing parameters between binary and ternary group-IV alloys, Solid State Commun. 138, 309 (2006). Times cited: 34
  128. G. Lucovsky, Y. Zhang, J. Luning, V.V. Afanse’v, A. Stesmans, S. Zollner, D. Triyoso, B.R. Rogers, and J.L. Whitten, Intrinsic band edge traps in nano-crystalline HfO2 gate dielectrics, Microelectronic Engineering 80, 110-113 (2005). Times cited: 24
  129. S. Zollner, W. Qin, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Stress-induced anisotropy of graphite-like amorphous carbon, J. Appl. Phys. 101, 053522 (2007). Times cited: 4
  130. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Theoretical investigation of PtSi surface energies and work functions, Phys. Rev. B 73, 195332 (2006). Times cited: 20
  131. B.Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, V. Vartanian, T. White, S. Zollner, D. Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, J. Hackenberg, V. Dhandapani, S. Murphy, R. Rai, J. Conner, P. Montgomery, C. Parker, J. Hildreth, R. Noble, M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab, and S. Venkatesan, Uniaxial and biaxial strain for CMOS performance enhancement, Conference Digest of the Third International Silicon Germanium Device and Technology Meeting (ISTDM 2006), p. 234. Times cited: 5
  132. S. Zollner, V. Vartanian, J.P. Liu, P. Zaumseil, H.J. Osten, A.A. Demkov, and B.-Y. Nguyen, Optical properties, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCy alloys on Si (001), Conference Digest of the Third International Silicon Germanium Device and Technology Meeting (ISTDM 2006), p. 90.
  133. V. Vartanian, S. Zollner, A. V.-Y. Thean, T. White, B.-Y. Nguyen, L. Prabhu, D. Eades, S. Parsons, H. Desjardins, K. Kim, Z.-X. Jiang, V. Dhandapani, J. Hildreth, R. Powers, G. Spencer, N. Ramani, M. Kottke, M. Canonico, X.-D. Wang, L. Contreras, D. Theodore, R. Gregory, and S. Venkatesan, Metrology challenges for 45 nm strained-Si device technology, IEEE Transactions on Semiconductor Manufacturing 19, pp. 381-390 (2006). Times cited: 11
  134. S. Zollner, J.P. Liu, P. Zaumseil, H.J. Osten, and A.A. Demkov, Optical properties, elasto-optical effects, and critical-point parameters of biaxially stressed Si1−yCy alloys on Si (001), Semicond. Sci. Technol. 22, (2007) S13-S20. Times cited: 2
  135. K. Chang, S. Bolton, M. Rossow, R. Gregory, J. Jiang, D. Jawarani, S. Zollner, D. Denning, and J. Cheek, In-situ surface preparation prior to Ni deposition for Ni salicide processes, in Ultra Clean Processing of Semiconductor Surfaces VIII, edited by P. Mertens, M. Meuris, and M. Heyns, Solid State Phenomena 134, 19-22 (Trans Tech Publications, Zurich, 2008).
  136. G. Karve, T. White, D. Eades, M. Sadaka, G. Spencer, J. Hackenberg, J. Norbert, T. Kropewnicki, S. Zollner, P. Beckage, J. Grant, R. Garcia, Bich-yen Nguyen, N. Cave, M. Hall, J. Cheek, S. Venkatesan, C. Lin, and I. Wu, Dual Substrate Orientation integration for high performance (110) PMOS, J. Electrochem. Soc. 602, 1036 (2006). Times cited: 1
  137. S. Pozder, R. Jones, V. Adams, H.-F. Li, M. Canonico, S. Zollner, S.H. Lee, R.J. Gutmann, J.-Q. Lu, Exploration of the Scaling Limits of 3D Integration, Mater. Res. Soc. Symp. Proc. 970, 0970-Y02-01 (2007). Times cited: 2
  138. S. Zollner, P. Grudowski, G. Karve, T. White, A. Thean, D. Jawarani, S. Bolton, H. Desjardins, M. Chowdhury, K. Chang, M. Jahanbani, R. Noble, L. Lovejoy, M. Rossow, D. Denning, D. Goedeke, S. Filipiak, R. Garcia, M. Raymond, V. Dhandapani, D. Zhang, L. Kang, P. Crabtree, X. Zhu, M.L. Kottke, R. Gregory, P. Fejes, X.-D. Wang, D. Theodore, W.J. Taylor, B.-Y. Nguyen Dual silicide SOI CMOS integration with low-resistance PtSi PMOS contacts, 2007 IEEE International SOI Conference, Indian Wells, CA, 1-4 Oct. 2007, p. 75-76.
  139. P. Grudowski, V. Dhandapani, S. Zollner, D. Goedeke, K. Loiko, D. Tekleab, V. Adams, G. Spencer, H. Desjardins, L. Prabhu, R. Garcia, M. Foisy, D. Theodore, M. Bauer, D. Weeks, S. Thomas, A. Thean, and B. White, An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with enhanced carbon incorporation by laser spike annealing 2007 IEEE International SOI Conference, Indian Wells, CA, 1-4 Oct. 2007, p. 17-18. Times cited: 8
  140. Xiang-Zheng Bo, Laegu Kang, T. Luo, K. Junker, S. Zollner, G. Spencer, V. Kolagunta, J. Cheek, High performance NMOS transistors of 45nm SOI technology, 2007 IEEE International SOI Conference, Indian Wells, CA, 1-4 Oct. 2007, p. 15-16. Times cited: 2
  141. S. Zollner, R.B. Gregory, M.L. Kottke, V. Vartanian, X.-D. Wang, D. Theodore, P.L. Fejes, J.R. Conner, M. Raymond, X. Zhu, D. Denning, S. Bolton, K. Chang, R. Noble, M. Jahanbani, M. Rossow, D. Goedeke, S. Filipiak, R. Garcia, D. Jawarani, B. Taylor, B.-Y. Nguyen, P.E. Crabtree, and A. Thean Metrology Of Silicide Contacts For Future CMOS, in 2007 International Conference on Frontiers of Characterization and Metrology, edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.M. Garner, D. Herr, R.P. Khosla, and E.M. Secula, AIP Conf. Proc. 931, 337-346 (2007). Times cited: 1
  142. V. Vartanian, D. Triyoso, K. Junker, M. Raymond, M. Canonico, G. Spencer, M. Rossow, S. Zollner, D. Roan, J. Smith, and C. Happ, Future Metrology Challenges in Advanced CMOS Development, Semiconductor Fabtech 33, 100 (2007).
  143. R. B. Gregory, D. H. Triyoso, R. I. Hegde, J. K. Schaeffer, P. L. Fejes, S. Zollner, Z. Yu, X.-D. Wang, Impact of additives on the microstructure of hafnium-based high-k dielectrics in Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies edited by Y. Chabal, A. Estève, N. Richard, and G. Wilk, (Mater. Res. Soc. Symp. Proc. 996E, Warrendale, PA, 2007), H05-37.
  144. H. Bentmann, A.A. Demkov, R. Gregory, and S. Zollner, Electronic, optical, and surface properties of PtSi thin films, Phys. Rev. B 78, 205302 (2008).
  145. B. Yang, R. Takalkar, Z. Ren, L. Black, A. Dube, J.W. Weijtmans, J. Li, J. Johnson, J. Faltermeier, A. Madan, Z. Zhu, A. Turansky, G. Xia, A. Chakravarti, R. Pal, K. Chan, A. Reznicek, T. Adam, B. Yang, J.P. de Souza, E. Harley, B. Greene, A. Gehring, M. Cai, D. Aime, S. Sun, H. Meer, J. Holt, D. Theodore, S. Zollner, P. Grudowski, D. Sadana, D.-G. Park, D. Mocuta, D. Schepis, E. Maciejewski, S. Luning, J. Pellerin, E. Leobandung, High-performance nMOSFET with in situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor, 2008 IEEE International Electron Devices Meeting, p. 4796611 (2008).
  146. X. Luo, A.A. Demkov, D. Triyoso, P. Fejes, R. Gregory and S. Zollner, Combined experimental and theoretical study of thin hafnia films, Phys. Rev. B 78, 245314 (2008).
  147. C.V. Weiss, J. Zhang, M. Spies, L.S. Abdallah, S. Zollner, M.W. Cole, and S.P. Alpay, Bulk-like Dielectric properties from metallo-organic solution deposited SrTiO3 films on Pt-coated Si substrates, J. Appl. Phys. 111, 054108 (2012).
  148. S.G. Choi, J. Hu, L.S. Abdallah, M. Limpinsel, Y.N. Zhang, S. Zollner, R.Q. Wu, and M. Law, Pseudodielectric function and critical-point energies of iron pyrite, Phys. Rev. B 86, 115207-01-05 (2012).
  149. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Dielectric function of LaAlO3 from 0.8 to 6.6 eV between 77 and 700 K, J. Vac. Sci. Technol. A 30, 061404-1-6 (2012).
  150. A.B. Posadas, C. Lin, A.A. Demkov and S. Zollner, Band gap engineering in perovskite oxides: Al-doped SrTiO3, Appl. Phys. Lett. 103, 142906 (2013).
  151. T. Willett-Gies, E. DeLong, and S. Zollner, Vibrational properties of LaAlO3 from Fourier-transform infrared ellipsometry, Thin Solid Films 571, 620-624 (2014).
  152. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Compositional dependence of the optical conductivity of Ni1−xPtx alloys (0< x <0.25) determined by spectroscopic ellipsometry, Thin Solid Films 571, 484-489 (2014).
  153. C.J. Zollner, T. Willett-Gies, S. Zollner, and S. Choi, Infrared to vacuum-ultraviolet ellipsometry studies of spinel (MgAl2O4), Thin Solid Films 571, 689-694 (2014).
  154. L.S. Abdallah, T.M. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical conductivity of Ni1−xPtx alloys (0< x <0.25) from 0.76 to 6.6 eV, AIP Advances 4, 017102 (2014).
  155. Kristy J. Kormondy, Agham B. Posadas, Alexander Slepko, Ajit Dhamdhere, David J. Smith, Khadijih N. Mitchell, Travis I. Willett-Gies, Stefan Zollner, Luke G. Marshall, Jianshi Zhou, and Alexander A. Demkov, Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization, J. Appl. Phys. 115, 243708 (2014).
  156. M. Choi, A.B. Posadas, C.A. Rodriguez, A. O’Hara, H. Seinige, A.J. Kellock, M.M. Frank, M. Tsoi, S. Zollner, V. Narayanan, and A.A. Demkov, Structural, optical and electrical properties of strained La-doped SrTiO3 films, J. Appl. Phys. 116, 043705 (2014).
  157. Lina S. Abdallah, Stefan Zollner, Christian Lavoie, Ahmet S. Ozcan, and Mark Raymond, Optical conductivity of Ni1−xPtxSi monosilicides (0<x<0.3) from spectroscopic ellipsometry, J. Vac. Sci. Technol. B 32, 051210 (2014).
  158. Andrew O’Hara, Timothy N. Nunley, Agham B. Posadas, Stefan Zollner, and Alexander A. Demkov, Electronic and Optical Properties of NbO2, J. Appl. Phys. 116, 213705 (2014).
  159. Kurt D. Fredrickson, Chungwei Lin, Stefan Zollner, and Alexander A. Demkov, Theoretical study of negative optical mode splitting in LaAlO3, Phys. Rev. B 93, 134301 (2016).
  160. Miri Choi, Chungwei Lin, Matthew Butcher, Cesar Rodriguez, Qian He, Agham B. Posadas, Albina Y. Borisevich, Stefan Zollner, and Alexander A. Demkov, Quantum confinement in transition metal oxide quantum wells, Appl. Phys. Lett. 106, 192902 (2015).
  161. T.I. Willett-Gies, C.M. Nelson, L.S. Abdallah, and S. Zollner, Two-phonon absorption in LiF and NiO from infrared ellipsometry, J. Vac. Sci. Technol. A 33, 061202 (2015).
  162. A. Ghosh, C.M. Nelson, L.S. Abdallah, and S. Zollner, Optical constants and band structure of trigonal NiO, J. Vac. Sci. Technol. A 33, 061203 (2015).
  163. R. Hazbun, J. Hart, R. Hickey, A. Ghosh, N. Fernando, S. Zollner, T.N. Adam, and J. Kolodzey, Silicon epitaxy using tetrasilane at low temperatures in ultra high vacuum chemical vapor deposition, J. Cryst. Growth 444, 21 (2016).
  164. J. Hart, R. Hazbun, D. Eldridge, R. Hickey, N. Fernando, T. Adam, S. Zollner, and J. Kolodzey, Tetrasilane and Digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys, Thin Solid Films 604, 23 (2016).
  165. N.S. Fernando, J. Hart, D. Zhang, R. Hickey, R. Hazbun, J. Kolodzey, and S. Zollner, Band structure and optical properties of pseudomorphic Ge1−x−ySixSny on Ge, 2016 IEEE Photonics Society Summer Topical Meeting Series, p. 98-99 (2016).
  166. T.N. Nunley, N. Fernando, J.M. Moya, N.S. Arachchige, C.M. Nelson, A.A. Medina, and S. Zollner, Precise Optical Constants of Ge and GeO2 from 0.5 to 6.6 eV, 2016 IEEE Photonics Society Summer Topical Meeting Series, p. 80-81 (2016).
  167. M.A.A. Talukder, Y. Cui, M. Compton, W. Geerts, L. Scolfaro, and S. Zollner, FTIR ellipsometry study on RF sputtered permalloy-oxide thin films, MRS Advances 1, 3361-3366 (2016).
  168. T.N. Nunley, T.I. Willett-Gies, J.A. Cooke, F. Manciu, P. Marsik, C. Bernhard, and S. Zollner, Optical constants, band gap, and infrared-active phonons of (LaAlO3)0.3(Sr2AlTaO6)0.35 (LSAT) from spectroscopic ellipsometry, J. Vac. Sci. Technol. A 34, 051507 (2016).
  169. D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, S. Zollner, and S. Chattopadhyay, Tunable optical properties in atomic layer deposition grown ZnO thin films, J. Vac. Sci. Technol. A 35, 01B108 (2016).
  170. T.N. Nunley, N.S. Fernando, N. Samarasingha, J.M. Moya, C.M. Nelson, A.A. Medina, and S. Zollner, Optical constants of germanium and thermally grown germanium dioxide from 0.5 to 6.6 eV via a multi-sample ellipsometry investigation, J. Vac. Sci. Technol. B 34, 061205 (2016).
  171. S. Zollner, T.N. Nunley, D.P. Trujillo, L.G. Pineda, and L.S. Abdallah, Temperature-dependent dielectric function of nickel, Appl. Surf. Sci. 421 B, 913 (2017).
  172. D. Pal, J. Singhal, A. Mathur, A. Singh, S. Dutta, S. Zollner, and S. Chattopadhyay, Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films, Appl. Surf. Sci. 421 B, 341 (2017).
  173. Nalin S. Fernando, T. Nathan Nunley, Ayana Ghosh, Cayla M. Nelson, Jacqueline A. Cooke, Amber A. Medina, Stefan Zollner, Chi Xu, Jose Menendez, and John Kouvetakis, Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si, Appl. Surf. Sci. 421 B, 905 (2017).
  174. Ryan Hickey, Nalin Fernando, John Hart, Ramsey Hazbun, Stefan Zollner and James Kolodzey, Properties of pseudomorphic and relaxed Ge1−xSnx alloys (x<0.185) grown by MBE, J. Vac. Sci. Technol. B 35, 021205 (2017).
  175. Chi Xu, Nalin S. Fernando, Stefan Zollner, John Kouvetakis, and José Menéndez, Observation of phase-filling singularities in the optical dielectric function of highly doped n-type Ge, Phys. Rev. Lett. 118, 267402 (2017).
  176. Nalin S. Fernando, Rigo A. Carrasco, Ryan Hickey, John Hart, Ramsey Hazbun, Stefan Schoeche, James N. Hilfiker, James Kolodzey, and Stefan Zollner, Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications, J. Vac. Sci. Technol. B 36, 021202 (2018).
  177. Dominic Imbrenda, Ryan Hickey, Rigo Carrasco, Nalin S. Fernando, Jeremy VanDerslice, Stefan Zollner, and James Kolodzey, Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy, Appl. Phys. Lett. 113, 122104 (2018).
  178. C. Emminger, R. Carrasco, N. Samarasingha, F. Abadizaman, and S. Zollner, Temperature dependent dielectric function and critical points of bulk Ge compared to α-Sn on InSb, 2018 IEEE Photonics Society Summer Topicals Meeting Series, p. 149-150.
  179. Rigo A. Carrasco, Cesy M. Zamarripa, Stefan Zollner, José Menéndez, Stephanie A. Chastang, Jinsong Duan, Gordon J. Grzybowski, Bruce B. Claflin, and Arnold M. Kiefer, The direct band gap of gray α-tin investigated by infrared ellipsometry, Appl. Phys. Lett. 113, 232104 (2018).
  180. Stefan Zollner, Pablo P. Paradis, Farzin Abadizaman, and Nuwanjula S. Samarasingha, Drude and Kukharskii mobility of doped semiconductors extracted from Fourier-transform infrared ellipsometry spectra, J. Vac. Sci. Technol. B 37, 012904 (2019).
  181. Rigo A. Carrasco, Stefan Zollner, Stephanie A. Chastang, Jinsong Duan, Gordon J. Grzybowski, Bruce B. Claflin, and Arnold M. Kiefer, Dielectric function and band structure of Sn1−xGex (x<0.06) alloys on InSb, Appl. Phys. Lett. 114, 062102 (2019).
  182. Aakash Mathur, Dipayan Pal, Ajaib Singh, Rinki Singh, Stefan Zollner, and Sudeshna Chattopadhyay, Dual ion beam grown silicon carbide thin films: variation in refractive index and band gap as a function of film thickness, J. Vac. Sci. Technol. B 37, 041802 (2019).
  183. Alireza Kazemi, Qingyuan Shu, Vinita Dahiya, Zahra Taghipour, Pablo Paradis, Christopher Ball, Theodore J. Ronningen, Stefan Zollner, Steven M. Young, Jordan Budhu, Kevin A. Grossklaus, Thomas E. Vandervelde, Anthony Grbic, Sanjay Krishna, Subwavelength antimonide infrared detector coupled with dielectric resonator antenna, in Infrared Technology and Applications XLV, Proc. SPIE 11002, 434-441 (2019).
  184. Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry, Appl. Phys. Lett. 115, 052105 (2019).
  185. Farzin Abadizaman and Stefan Zollner, Optical constants of polycrystalline Ni from 0.06 to 6.0 eV at 300 K, J. Vac. Sci. Technol. B 37, 062920 (2019).
  186. C. Emminger, F. Abadizaman, N. S. Samarasingha, T. Tiwald, and S. Zollner, Temperature dependent dielectric function and direct band gap of Ge, J. Vac. Sci. Technol. B 38, 012202 (2020).
  187. Steffen Richter, Oliver Herrfurth, Shirly Espinoza, Mateusz Rebarz, Miroslav Kloz, Joshua A. Leveillee, André Schleife, Stefan Zollner, Marius Grundmann, Jakob Andreasson, and Rüdiger Schmidt-Grund, Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry, New Journal of Physics 22, 083066 (2020).
  188. B. Claflin, G. J. Grzybowski, A. M. Kiefer, M. E. Ware, and S. Zollner, Process for growth of group-IV alloys containing tin by remote plasma enhanced chemical vapor deposition, Front. Mater. 7, 44 (2020).
  189. Nuwanjula S. Samarasingha, Stefan Zollner, Dipayan Pal, Rinki Singh, and Sudeshna Chattopadhyay, Thickness dependence of infrared lattice absorption and excitonic absorption in ZnO layers on Si and SiO2 grown by atomic layer deposition, J. Vac. Sci. Technol. B 38, 042201 (2020).
  190. Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kiliç, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, and Mathias M. Schubert, Zinc gallate spinel dielectric function, band-to-band transitions, and Γ-point effective mass parameters, Appl. Phys. Lett. 118, 132102 (2021).
  191. Carola Emminger, Farzin Abadizaman, Nuwanjula S Samarasingha, José Menéndez, Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Martin Zahradník, Rüdiger Schmidt-Grund, Jakob Andreasson, Stefan Zollner, Analysis of temperature-dependent and time-resolved ellipsometry spectra of Ge, 2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM), Cabo San Lucas, Mexico, 2021, pp. 1-2. DOI: 10.1109/SUM48717.2021.9505707.
  192. Nuwanjula S. Samarasingha and Stefan Zollner, Temperature dependence of the optical phonon reflection band in GaP, J. Vac. Sci. Technol. B 39, 052201 (2021).
  193. Dominic Imbrenda, Rigo A. Carrasco, Ryan Hickey, Nalin S. Fernando, Stefan Zollner, and James Kolodzey, Band structure critical point energy in germanium-tin alloys with high tin contents, Appl. Phys. Lett. 119, 162102 (2021).
  194. Carola Emminger, Nuwanjula Samarasingha, Melissa Rivero Arias, Farzin Abadizaman, Jose Menendez, and Stefan Zollner, Excitonic effects at the temperature-dependent direct band gap of Ge, J. Appl. Phys. 131, 165701 (2022).
  195. Farzin Abadizaman, Jaden Love, and Stefan Zollner, Optical constants of single-crystalline Ni(100) from 77 K to 770 K from ellipsometry measurements, J. Vac. Sci. Technol. A 40 033202 (2022).
  196. Carola Emminger, Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Martin Zahradník, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Coherent acoustic phonon oscillations and transient critical point parameters of Ge from femtosecond pump-probe ellipsometry, phys. stat. solidi RRL 16 (7), 2200058 (2022).
  197. Stefan Zollner, Farzin Abadizaman, Carola Emminger, and Nuwanjula Samarasingha, Spectroscopic ellipsometry from 10 to 700 K, Adv. Opt. Techn. 11, 117-135 (2022).
  198. Melissa Rivero Arias, Carlos Armenta, Carola Emminger, Cesy M. Zamarripa, Nuwanjula S. Samarasingha, Jaden R. Love, Sonam Yadav, and Stefan Zollner, Temperature dependence of the infrared dielectric function and the direct band gap of InSb from 80 to 725 K, J. Vac. Sci. Technol. B 41, 022203 (2023).
  199. Stefan Zollner, Shivashankar R. Vangala, Vladimir L. Tassev, Duane Brinegar, and Samuel Linser, Infrared Dielectric Function of GaAs1−xPx Semiconductor Alloys Near the Reststrahlen Bands, Appl. Phys. Lett. 123, 172102 (2023).
  200. Stefan Zollner, Excitonic effects in the optical absorption of gapless semiconductor α-tin near the direct band gap, J. Vac. Sci. Technol. B 42, 022203 (2024).
  201. Bruce Claflin, Gordon J. Grzybowski, Stefan Zollner, Bridget R. Rogers, Timothy A. Cooper, and David C. Look, Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire and fused silica substrates, J. Vac. Sci. Technol. B 42, 052204 (2024).
  202. Stefan Zollner, Carlos A. Armenta, Sonam Yadav, and José Menéndez, Conduction band nonparabolicity, chemical potential, and carrier concentration of intrinsic InSb as a function of temperature, J. Vac. Sci. Technol. A 43 (1), 012801 (2025).

Books (edited volumes) and Chapters

  1. Silicon-Germanium Carbon Alloys. Growth, Properties and Applications, edited by Sokrates T. Pantelides and Stefan Zollner, (Taylor and Francis, New York, 2002), Vol. 15 of Optoelectronic Properties of Semiconductors and Superlattices, M.O. Manasreh, series editor, 538 pages.
  2. W. Arden et. al., International Technology Roadmap for Semiconductors. 2001 Edition, (Semiconductor Industry Association, 2001).
  3. Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications, edited by B.D. Weaver, O. Manasreh, C. Jagadish, and S. Zollner, (Mat. Res. Soc. Pittsburgh, 2003).
  4. Characterization and Metrology for ULSI Technology, edited by D.G. Seiler, A.C. Diebold, T.J. Shaffner, R. McDonald, S. Zollner, R.P. Khosla, and E.M. Secula, (American Institute of Physics, Melville, NY, 2003), AIP Conf. Proc. vol. 683.
  5. W. Arden et. al., International Technology Roadmap for Semiconductors. 2003 Edition, (Semiconductor Industry Association, 2003).
  6. Characterization and Metrology for ULSI Technology 2005, edited by D.G. Seiler, A.C. Diebold, R. McDonald, C.R. Ayre, R.P. Khosla, S. Zollner, and E.M. Secula, (American Institute of Physics, Melville, NY, 2005), AIP Conf. Proc. vol. 788.
  7. W. Arden et. al., International Technology Roadmap for Semiconductors. 2005 Edition, (Semiconductor Industry Association, 2005).
  8. David G. Seiler, Stefan Zollner, Alain C. Diebold, and Paul M. Amirtharaj, Optical Properties of Semiconductors, in Handbook of Optics, Vol. IV, edited by M. Bass, (Optical Society of America, 3rd edition, New York, 2010).
  9. S. Zollner, Spectroscopic Ellipsometry for Inline Process Control in the Semiconductor Industry, in Ellipsometry at the Nanoscale edited by M. Losurdo and K. Hingerl, (Springer, Heidelberg, 2013), p. 607-627. Times cited: 1
  10. S. Zollner, Manuel Cardona’s contributions to semiconductor technology, in Manuel Cardona: Memories and Reminiscences edited by K. Ensslin and L. Viña, (Springer, Heidelberg, 2016).

Patents

  1. J. Ramdani, R. Droopad, L. Tisinger, J. Curless, S. Zollner, Semiconductor structure having high dielectric constant material, Patent number 507317, certification number 165165, issued on 21 October 2002, in Taiwan.
  2. Stefan Zollner, Veer Dhandapani, Paul Grudowski, and Greg Spencer, Anneal of epitaxial layer in a semiconductor device, US patent 7,416,605 B2 issued on 26 August 2008. Times cited: 28
  3. Paul A. Grudowski, Veer Dhandapani, Darren V. Goedeke, V.-Y. Thean, and Stefan Zollner, Method of making a semiconductor device with embedded stressor, US patent 7,736,957 issued on 15 July 2010. Times cited: 6
  4. Stefan Zollner, Veer Dhandapani, and Paul A. Grudowski, Semiconductor device with stressors and methods thereof, US patent application number 20080293192 A1 published on 27 November 2008.
  5. Stefan Zollner and Bich-Yen Nguyen, Process of forming an electronic device including a doped semiconductor layer, US patent 7,560,354 B2 issued on 14 July 2009.
  6. Stefan Zollner, Method of forming a semiconductor device having a stressed electrode and silicide regions, US patent application 20090227099 A1 published on 10 September 2009.
  7. Paul Grudowski, Veer Dhandapani, Stefan Zollner, Fabrication of semiconductor device with stressor, US patent 7,687,354 B2 issued on 30 March 2010. Times cited: 2
  8. Byoung Min, Stefan Zollner, Qingqing Liang, Efficient body-contacted field effect transistor with low body resistance, US patent 7,820,530 issued on 26 October 2010. Times cited: 3
  9. Z. Zhen, B. Yang, S.M. Rossnagel, A. Kellock, Y. Zhu, A.S. Ozcan, S. Zollner, C. Lavoie, Silicide contact formation, US patent 8,404,589 B2 issued on 26 March 2013.
  10. E. Maciejewski, D. Slisher, and S. Zollner, eFuse and Method of Fabrication, US patent 8,980,720 B2, issued on 17 March 2015.
  11. A. Ozcan, M. Cai, and S. Zollner, Method to remove gate spacers after metal-rich silicide formation, (in preparation).
  12. Ahmet Ozcan, Christian Lavoie, Bin Yang, and Stefan Zollner, Method for forming self-aligned ultra-thin uniform Ni silicide contacts (in preparation).

Contributions to conferences (abstract only)

  1. S. Zollner, Sudha Gopalan, and M. Cardona, Deformationspotentiale und Streuraten für Intervalleystreuung, Verhandl. DPG (VI) 24, HL 8.4, (1989).
  2. Sudha Gopalan, S. Zollner, and M. Cardona, Intervalley Deformation Potentials and Scattering Rates in Zincblende Semiconductors, Bull. Am. Phys. Soc. 34, 832 (1989).
  3. S. Zollner, U. Schmid, C. H. Grein, N. E. Christensen, M. Cardona, and L. Ley, Empirical Pseudopotential and LMTO calculations of spin-splittings in AlAs, AlSb, and strained GaAs, Bull. Am. Phys. Soc. 35, 828 (1990).
  4. C. H. Grein, S. Zollner, and M. Cardona, Theory of second order Raman scattering in semiconductors under uniaxial stress, Bull. Am. Phys. Soc. 35, 234-235 (1990).
  5. M. K. Kelly, S. Zollner, and M. Cardona, Semiconductor surface optical properties from spectroscopic ellipsometry, Bull. Am. Phys. Soc. 36, 864 (1991).
  6. M. K. Kelly, S. Zollner, and M. Cardona, Surface differential spectroscopy with in situ ellipsometry, Il Vuoto, Scienza e Tecnologia, (1992).
  7. P. M. Mooney, S. Zollner, J. O. Chu, and B. S. Meyerson, Properties of SiGe layers grown by UHV-CVD, Bull. Am. Phys. Soc. 37, 716 (1992).
  8. S. Zollner, R.T. Collins, K. Eberl, S.S. Iyer, P.J. Wang, J.O. Chu, and B.S. Meyerson, Characterization of SiGeC alloys and MQWs using x-ray scattering and photoluminescence, Bull. Am. Phys. Soc. 37, 552 (1992).
  9. J. Faul, G. Neuhold, L. Ley, J. Fraxedas, S. Zollner, J. D. Riley, and R. C. G. Leckey, Determination of Conduction Band States in Five III-V-Semiconductors, Verhandl. DPG (VI) 28, 1446, (1993).
  10. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), 42nd Midwest Solid-State Conference, Kansas City, Mo, October 14 to 15, 1994.
  11. K. G. Jensen, J. M. Haisch, S. Zollner, and K. D. Myers, Measurements of femtosecond laser light using a commercial wavemeter, 42nd Midwest Solid-State Conference, Kansas City, Mo, October 14 to 15, 1994.
  12. K. G. Jensen, J. M. Haisch, S. Zollner, and K. D. Myers, Why autocorrelators for ultrafast lasers will soon be obsolete, Bull. Am. Phys. Soc. 40, 140 (1995).
  13. S. Zollner, C. M. Herzinger, J. A. Woollam, S. S. Iyer, A. P. Powell, and K. Eberl, Piezo-optical response of Si1−yCy alloys grown pseudomorphically on Si (100), Bull. Am. Phys. Soc. 40, 277 (1995).
  14. K. E. Junge, A. A. Affolder, R. Lange, and S. Zollner, On the origin of extra peaks in the dielectric function of Si1−x−yGexCy alloys grown pseudomorphically on Si (001), 43rd Midwest Solid-State Conference, St. Louis, Mo., October 14, 1995.
  15. K. Junge, R. Lange, and S. Zollner, Spectroscopic ellipsometry and band structure of Si1−x−yGexCy alloys, Bull. Am. Phys. Soc. 41, 420 (1996).
  16. K. D. Myers, S. Zollner, R. Lange, and K. G. Jensen, Femtosecond time-resolved reflectivity of Ge, APS march meeting, St. Louis, MO, 1996 (post-deadline poster).
  17. R. Lange, K. E. Junge, A. A. Affolder, and S. Zollner, Spectroscopic ellipsometry and band structure of Si1−x−yGexCy alloys, MRS Spring Meeting, April 8-12, 1996, San Francisco, CA, MRS Spring Meeting Abstracts, 116 (1996).
  18. S. Zollner, K. D. Myers, K. G. Jensen, J. M. Dolan, D. W. Bailey, C. J. Stanton, Femtosecond hole dynamics in Ge studied by pump-probe reflectivity, 44th Midwest Solid-State Conference, Lincoln, NE, October 18-19, 1996.
  19. K. E. Junge, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey, Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si, 44th Midwest Solid-State Conference, Lincoln, NE, October 18-19, 1996.
  20. R. Lange, K. E. Junge, S. Zollner, S. S. Iyer, A. P. Powell, and K. Eberl, Effects of biaxial stress on the band structure of Si1−x−yGexCy/Si(001), 44th Midwest Solid-State Conference, Lincoln, NE, October 18-19, 1996.
  21. S.-J. Lee, R. Lange, S. Zollner, P. Canfield, B. Harmon, and D. W. Lynch, The magneto-optical properties of rare earth-transition metal compounds, 44th Midwest Solid-State Conference, Lincoln, NE, October 18-19, 1996.
  22. S. Zollner, Interband hole scattering in Ge studied by femtosecond pump-probe reflectivity, APS March Meeting 1997 (invited talk).
  23. R. Lange, S.-J. Lee, S. Hong, P.C. Canfield, S. Zollner, D.W. Lynch, and B.N. Harmon, Magneto-optical response and band structure of XPt3 (X=Mn, Co), APS March meeting, Kansas, City, MO, March 1997.
  24. K.E. Junge, R. Lange, J.M. Dolan, S. Zollner, M. Dashiell, B.A. Orner, and J. Kolodzey, Dielectric response of low dislocation-density Ge and Ge-rich Si1−x−yGexCy alloys grown on Si (001), APS March meeting, Kansas, City, MO, March 1997.
  25. S.-J. Lee, R. Lange, S. Zollner, P.C. Canfield, B.N. Harmon, and D.W. Lynch, The electronic structure and magneto-optical properties of heavy rare earth-Fe2 compounds, APS March meeting, Kansas, City, MO, March 1997.
  26. S. Zollner, Spectroscopic Ellipsometry of SiGeC: Band structure, strain, composition, transport, and dislocations, SiGeC Workshop, University of Texas, Austin, TX, April 25, 1997 (invited talk).
  27. R. Liu, D. O’Meara, N. Cave, S. Zollner, and M. Liaw, Raman characterization of stresses and Ge composition in Si/Si1−xGex SEMFET structures, Bull. Am. Phys. Soc. 43, 148 (1998).
  28. S. Zollner, R. Liu, J. Christiansen, W. Chen, K. Monarch, T.-C. Lee, R. Singh, J. Yater, W. Paulson, and C. Feng, Raman and ellipsometry studies of phosphorus-doped poly-Si films, Bull. Am. Phys. Soc. 43, 149 (1998).
  29. S. Zollner, R. Liu, E. Duda, D. Reed, T. Remmel, and J. Christiansen, Optical Properties of bulk and epi SiC for power devices, Bull. Am. Phys. Soc. 43, 961 (1998).
  30. S. Zollner, R. Liu, E. Duda, D. Reed, and J. Christiansen, Optical characterization of bulk and thin-film SiC, MRS Spring Meeting, April 13-17, 1998, San Francisco, CA, MRS Spring Meeting Abstracts, 111 (1998).
  31. S. Zollner, J.G. Chen, J.N. Hilfiker, T.E. Tiwald, and J.A. Woollam, Optical properties of bulk 4H and 6H and epitaxial 3C SiC on Si, J. Electron. Mater. 27 (7), abstract page 37 (1998).
  32. T.E. Tiwald, S. Zollner, J.A. Woollam, and J.E. Christiansen, Measurement of carrier concentration and lattice absorption in bulk and epitaxial silicon carbide using infrared ellipsometry, American Vacuum Society 45th International Symposium, November 2, 1998.
  33. T.E. Tiwald, S. Zollner, J.A. Woollam, and J. Christiansen, Infrared ellipsometric investigation of phonon and effective mass anisotropies of silicon carbide, Bull. Am. Phys. Soc. 44, 1337 (1999).
  34. S. Zollner, T.C. Lee, K. Noehring, W.M. Huang, D. Monk, T. Wetteroth, S.R. Wilson, and J.N. Hilfiker, Thin-film metrology of semiconductor-on-insulator films, Bull. Am. Phys. Soc. 44, 1338 (1999).
  35. S. Zollner, E. Duda, T. Wetteroth, C. Weitzel, S.Q. Hong, M. Liaw, J. Gutt, S.R. Wilson, R. Vaudo, J.M. Redwing, J.N. Hilfiker, T.E. Tiwald, and J.A. Woollam, Spectroscopic ellipsometry of wide band-gap semiconductors, Bull. Am. Phys. Soc. 44, 1365 (1999).
  36. S. Zollner, T.-C. Lee, K. Noehring, W. M. Huang, D. Monk, T. Wetteroth, S. R. Wilson, J. N. Hilfiker, Thin-film metrology of SOI and SiCOI, MRS Spring Meeting, April 5-9, 1999, San Francisco, CA, MRS Spring Meeting Abstracts, 311-312 (1999).
  37. S. Zollner, Use of streak camera for picosecond emission microscopy and applications for failure analysis of integrated circuits, Motorola Technical Development 37, 24 (1999).
  38. R. Liu and S. Zollner, Raman spectroscopy of SrBi2Ta2O9, Int. Conf. on Solid State Spectroscopy, September 5-7, 1999, Schwäbisch Gmünd, Germany.
  39. Stefan Zollner, Jill Hildreth, Ran Liu, Peter Zaumseil, Marita Weidner, and Bernd Tillack, Ellipsometric thickness measurements of strained Si1−x−yGexCy alloys on Si (001), Bull. Am. Phys. Soc. 45, 587 (2000).
  40. Stefan Zollner, A.A. Demkov, P.L. Fejes, R.B. Gregory, R. Liu, J. Curless, Z. Yu, J. Ramdani, R. Droopad, P. Alluri, T.E. Tiwald, J.N. Hilfiker, J.A. Woollam, Optical properties of bulk SrTiO3 and thin-films on Si and Pt, Bull. Am. Phys. Soc. 45, 434 (2000).
  41. J.N. Hilfiker, T.E. Tiwald, C.L. Bungay, T. Wagner, and S. Zollner, Materials characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry, Workshop Ellipsometrie, February 22-23, 2000, Stuttgart, Germany.
  42. T. Prokofyeva, M. Seon, J. Vanbuskirk, Mark Holtz, S.A. Nikishin, N.N. Faleev, H. Temkin, Stefan Zollner, and Atul Konkar, Vibrational Properties of AlN grown on Si (111), Gordon Conference on Point and Line Defects in Semiconductors, Colby-Sawyer College, New London, NH, July 9-14, 2000.
  43. T. Wagner, J. Hilfiker, T. Tiwald, C. Bungay, and S. Zollner, Materials Characterization in the Vacuum Ultraviolet with variable angle spectroscopic ellipsometry, INF Meeting, National Conference on the Physics of Matter, Genova, Italy, June 12-16, 2000.
  44. S. Zollner, A. Konkar, M. Kottke, S. Lu, and W. Chen, Wireless semiconductor technology: Related critical characterization and metrology, 2000 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, 26-29 June 2000 (invited talk).
  45. S. Zollner, Inline optical metrology of semiconductor heterostructures in microelectronics manufacturing, Workshop on Optical Characterization of Interfaces: Status and Opportunities, Park City, UT, 15-18 October 2000 (invited talk).
  46. A. Konkar, Q. Xie, S. Zollner, R. Liu, R.B. Gregory, and S. Madhukar, Characterization of Si nanoparticles for memory applications, MRS Fall Meeting, 26-30 November 2000, Boston, MA, MRS Fall Meeting Abstracts, 113 (2000).
  47. S. Zollner, Optical, vibrational, and structural properties of high-𝜖 transition metal oxides, (invited talk), Bull. Am. Phys. Soc. 46, 463 (2001).
  48. M. Holtz, T. Prokofyeva, M. Seon, J. Vanbuskirk, S.A. Nikishin, N.N. Faleev, H. Temkin, and S. Zollner, Vibrational Raman and infrared properties of AlN grown on silicon, Bull. Am. Phys. Soc. 46, 1123 (2001).
  49. S. Zollner, A. Konkar, R. Liu, H. Yapa, P.F. Dryer, V.A. Neeley, Q. Xie, G.F. Grom, Q. Zhu, R. Krishnan, P.M. Fauchet, and L. Tsybeskov, Optical and structural characterization of nanocrystalline Si/SiO2 superlattices, Bull. Am. Phys. Soc. 46, 416 (2001).
  50. R. Liu, S. Zollner, P. Fejes, R. Gregory, A. Konkar, S. Lu, Z. Yu, J. Curless, R. Droopad, J. Finder, and K. Eisenbeiser, Structural and physical properties of epitaxial SrTiO3 films on Si, Bull. Am. Phys. Soc. 46, 377 (2001).
  51. V. Kuznetsov, J. Ruan, G. Grom, R. Krishnan, L. Tsybeskov, B. White, and S. Zollner, A prototype of a memory device utilizing resonant tunneling in nc-Si/SiO2 superlattices, Bull. Am. Phys. Soc. 46, 529 (2001).
  52. S. Zollner and R. Liu, Vibrational and band-gap engineering of transition metal oxides for high-k gate applications, 15th International Vacuum Congress and 48th AVS International Symposium, San Francisco, CA, 28 October to 2 November 2001 (invited talk), p. 74.
  53. C.S. Cook, N.V. Edwards, S. Zollner, R.B. Gregory, E. Duda, D. Werho, and H.G. Tompkins, Stoichiometry of silicon nitride films: A comparison of UV/VIS spectrometry with spectroscopic ellipsometry and Rutherford backscattering spectroscopy, APS Four Corners Section Meeting, November 2nd, 2001, Las Cruces, NM.
  54. C.S. Cook, N.V. Edwards, S. Zollner, R.B. Gregory, E. Duda, D. Werho, and H.G. Tompkins, Stoichiometry of silicon nitride films: A comparison of UV/VIS spectrometry with spectroscopic ellipsometry and Rutherford backscattering spectroscopy, MRS Fall Meeting 2001 (accepted).
  55. S. Zollner, N.V. Edwards, E. Duda, J. Tolle, J. Taraci, M.R. McCartney, J. Menendez, G. Wolf, D.J. Smith, and J. Kouvetakis, Optical, vibrational, and structural properties of Ge-Sn alloys on Si, Bull. Am. Phys. Soc. 47, 59 (2002).
  56. N.V. Edwards, J. Vella, R. Liu, Q. Xie, S. Zollner, I. Adhihetty, J. Vires, K.H. Junker, Correlation of optical and mechanical properties of organo-silicate glasses, Bull. Am. Phys. Soc. 47, 242 (2002).
  57. C.S. Cook, S. Zollner, N.V. Edwards, R.B. Gregory, R. Liu, and H.G. Tompkins, Stoichiometry of silicon nitride films: A comparison of spectroscopic ellipsometry with Rutherford backscattering spectroscopy, Bull. Am. Phys. Soc. 47, 242 (2002).
  58. R. Liu and S. Zollner, Application of UV-Raman spectroscopy to microelectronic materials and devices, Bull. Am. Phys. Soc. 47, 243 (2002).
  59. R. Liu, N.V. Edwards, S. Zollner, J. Kulik, R. Gregory, X.D. Wang, S.F. Lu, J. Schaeffer, D. Triyoso, and B.Y. Nguyen, Characterization of CVD and ALD HfO2 films as alternative gate dielectrics, Bull. Am. Phys. Soc. 47, 894 (2002).
  60. S. Zollner, N.V. Edwards, J.N. Hilfiker, T.E. Tiwald, and C.M. Herzinger, Linear optical response functions of semiconductors and insulators determined using spectroscopic ellipsometry, Bull. Am. Phys. Soc. 47, 1126 (2002).
  61. R. Liu, N.V. Edwards, S. Zollner, J. Kulik, P. Fejes, R. Gregory, X.D. Wang, D. Werho, S.F. Lu, J. Schaeffer, D. Triyoso, and B.Y. Nguyen, Characterization of HfO2 films for high-k gate application, Mat. Res. Soc. Spring meeting, San Francisco, April 1-5, 2002, MRS 2002 Spring Meeting Abstracts, page 57.
  62. Bich-Yen Nguyen, Vidya Kaushik, Jamie Schaeffer, Melissa Zavala, Kim Reid, Chris Hobbs, LuRea Dip, Dina Triyoso, Darrell Roan, Renee Nieh, Cathy Wang, Hongwei Zhou, Michael Ramon, Bruce Hradsky, Jack Jiang, Ran Liu, Stefan Zollner, Lata Prabhu, Joe Kulik, Erika Duda, Ginger Edwards, Rich Gregory, Rama Hegde, James Conner, Laura Contreras, Jim Christiansen, Jeff Finder, Kurt Eisenbeiser, Jimmy Yu, Ravi Droopard, Jeff Baker, Steve Voight, Laura Siragusa, Bruce White, Philip J. Tobin, Bob Jones, Peter Gill, Joe Mogab, Karen Guo, Progress and Integration Challenges of the Metal Oxide development for CMOS Gate Dielectric application, The 8th International Conference on Electronic Materials (ICEM2000), June 10-14, 2002, Xian, China, (invited talk).
  63. J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. Duda, L. Contreras, J. Christiansen, S. Zollner, P. Tobin, B.-Y. Nguyen, R. Nieh, M. Ramon, R. Rao, R. Hegde, and R. Rai, HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium, First International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Manufacturing and Reliability Issues, 202nd Meeting of the Electrochemical Society, Salt Lake City, UT, October 20-24, 2002.
  64. S. Zollner, J. Taraci, J. Tolle, M. Bauer, E. Duda, M.R. McCartney, J. Menendez, G. Wolf, D.J. Smith, and J. Kouvetakis, Optical properties and band structure of Ge-Sn alloys on Si grown by UHV-CVD, 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, UK, 29 July-2 August 2002.
  65. S. Zollner, J. Kulik, G. Tam, R. Liu, P. Fejes, N.V. Edwards, R.B. Gregory, D. Werho, S. Lu, J. Ramdani, L. Tisinger, Z. Yu, A. Demkov, D. Jordan, R. Droopad, J. Curless, K. Eisenbeiser, J.L. Edwards, H. Li, K. Moore, W.J. Ooms, A. Talin, and J. Finder, Physical, optical, and vibrational properties of SrTiO3 films on Si for high-k gate applications, 26th International Conference on the Physics of Semiconductors, Edinburgh, Scotland, UK, 29 July-2 August 2002.
  66. N.V. Edwards, J. Wasson, S. Zollner, J. Kulik, Q. Xie, X.-D. Wang, K. Reid, D. Roan, C.M. Herzinger, and T.E. Tiwald, VUV spectroscopic ellipsometry studies of key substrate materials for 157 nm lithography, 3rd International Symposium on 157 nm lithography, Antwerp, Belgium, 3-6 September 2002.
  67. C.S. Cook, M.R. Bauer, J. Taraci, J. Tolle, C. Bungay, J. Menendez, S. Zollner, and J. Kouvetakis, Tunable Band Gaps in Ge-Sn alloys grown on Silicon, Bull. Am. Phys. Soc. 48, 844 (2003).
  68. S. Zollner, C.S. Cook, Q. Xie, M. Erickson, X.-D. Wang, E. Duda, M. Canonico, R. Liu, T. White, B.-Y. Nguyen, Spectroscopic ellipsometry on strained Si channel structures, Bull. Am. Phys. Soc. 48, 1293 (2003).
  69. S. Zollner, Rewards for Performance, American Physical Society March Meeting, 2 March 2003, Austin, TX (invited tutorial).
  70. Qianghua Xie, Ran Liu, Xiang-Dong Wang, Michael Canonico, Erika Duda, Jim Christiansen, Stefan Zollner, Shawn Thomas, Ted White, Alex Barr, Bich-Yen Ngyuyen, Material Characterization for strained Si CMOS, Mat. Res. Soc. Spring meeting, San Francisco, April 21-25, 2003, MRS 2003 Spring Meeting Abstracts, page 57.
  71. J. Kulik, R. Liu, N.V. Edwards, S. Zollner, R. Gregory, X.D. Wang, D. Werho, and D. Triyoso, Characterization of HfO2 films for high-k gate application, 2003 TMS Electronic Materials Conference, 26 June 2003, Salt Lake City, UT.
  72. Stefan Zollner, Candi S. Cook, Alex A. Volinsky, Mariam Sadaka, Q. Xie, X.-D. Wang, M. Canonico, R. Liu, T. White, and B.-Y. Nguyen, Piezo-optical response of high-mobility strained Si CMOS layers, 2003 Ellipsometry Conference, Vienna, Austria.
  73. Candi S. Cook, Terry Daly, Ran Liu, Michael Canonico, Q. Xie, R.B Gregory, and Stefan Zollner, Spectroscopic Ellipsometry for in-line monitoring of silicon nitrides, 2003 Ellipsometry Conference, Vienna, Austria.
  74. Candi S. Cook, Stefan Zollner, Matthew R. Bauer, Pavan Aella, John Kouvetakis, Jose Menendez, Optical constants and interband transitions of Ge1−xSnx alloys (x <0.2) grown on Si by UHV-CVD, 2003 Ellipsometry Conference, Vienna, Austria.
  75. Stefan Zollner, Ran Liu, Qianghua Xie, Michael Canonico, Shifeng Lu, Mike Kottke, Xiang-Dong Wang, Alex Volinsky, Mariam Sadaka, Ted White, Alex Barr, Shawn Thomas, Bich-Yen Nguyen, Candi Cook, Characterization techniques for strained Si CMOS, Int. Symp. Compound Semiconductors, San Diego, CA, August 2003 (invited talk).
  76. S. Zollner, R. Liu, M. Canonico, M. Kottke, Q. Xie, S. Lu, M. Sadaka, T. White, A. Barr, B.-Y. Nguyen, S. Thomas, C.S. Cook, A. Volinsky, Photon, electron, and ion spectroscopies applied to thin strained Si films, AVS 50th International Symposium, Baltimore, MD, 2-7 November 2003 (invited talk).
  77. C.S. Cook, S. Zollner, M. Bauer, J. Kouvetakis, J. Menendez, J. Tolle, and C. Bungay, Electronic band structure of Ge1−xSnx alloys grown on Si, AVS 50th International Symposium, Baltimore, MD, 2-7 November 2003.
  78. S. Zollner, Rewards for Performance, AVS Job Information Forum, AVS 50th International Symposium, Baltimore, MD, 2-7 November 2003 (invited talk).
  79. S. Zollner, R. Gregory, N. Medendorp, M. Passlack, and D. Braddock, Optical and electrical properties of amorphous GdxGa0.4−xO0.6 films in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs, 34th IEEE Semiconductor Interface Specialists Conference, Washington, DC, Dec. 4-6, 2003.
  80. C.S. Cook, S. Zollner, P. Aella, A. Chizmeshya, J. Menendez, and J. Kouvetakis, Evaluation of the Electronic Band Structure of a New Semiconductor Ternary using Ge, Si, and Sn, APS Four Corners Section Meeting, Tempe, AZ, 24 Oct. 2003.
  81. S. Zollner, R. Liu, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Birefringence and VIS/VUV optical absorption of graphite-like amorphous carbon, Bull. Am. Phys. Soc. 49, 599 (2004).
  82. C.S. Cook, S. Zollner, J. Menendez, A.V.G. Chizmeshya, P. Aella, J. Tolle, and J. Kouvetakis, Evaluation of the electronic band structure of a new semiconductor material using Ge, Si, and Sn, Bull. Am. Phys. Soc. 49, 67 (2004).
  83. S. Zollner, W. Qin, R.B. Gregory, N.V. Edwards, K. Junker, and T.E. Tiwald, Optical properties (IR to VUV) and birefringence of graphite-like amorphous carbon, AVS meeting, Los Angeles, 2004.
  84. M. Sadaka, A. V-Y. Thean, A. Barr, T. White, V. Vartanian, B-Y. Nguyen, M. Zavala, D. Eades, S. Zollner, Q. Xie, X-D. Wang, M. Kottke, R. Liu, Integration Challenges for 45nm Strained Si Devices, AVS meeting, Los Angeles, 2004 (invited talk).
  85. M. Sadaka, A. Thean, A. Barr, T. White, V. Vartanian, M. Zavala, B.-Y. Nguyen, Q. Xie, R. Liu, X.-D. Wang, M. Kottke, and S. Zollner, Enhancement of SiGe relaxation for fabrication of SGOI substrates using condensation, 206th Meeting of the Electrochemical Society, Oct. 3-8, 2004, Honolulu, HI.
  86. S. Zollner, Y. Liang, D. Theodore, Z. Yu, D. Triyoso, J. Curless, and C. Tracy, Optical properties and metrology of the high-k/Si interface, Bull. Am. Phys. Soc. 50, 1246 (2005).
  87. B. Nguyen, A. Thean, D. Zhang, T. White, M. Sadaka, D. Triyoso, J. Schaeffer, B. Goolsby, and L. Mathew, New materials, processes and device structures for 65nm CMOS technology node and beyond, 207th Meeting of the Electrochemical Society, May 15-20, 2005.
  88. V. Vartanian, V.Y. Thean, Q. Xie, X.D. Wang, M. Canonico, S. Parsons, D. Eades, J. Vella, T. Kriske, B. Lu, L. McCormick, B.Y. Nguyen, L. Contreras, D. Theodore, M. Sadaka, K. Kim, J. Mogab, S. Zollner, T. White, Z.X. Jiang, L. Prabhu, M. Zavala, M. Kottke, R. Gregory Metrology Challenges for 45nm Strained-Si Devices, in 2005 International Conference on Metrology and Characterization for ULSI Technology, edited by D.G. Seiler et al. (invited talk).
  89. D. Triyoso, D. Roan, S. Zollner, Z.-X. Jiang, P. Tobin, R. Hegde, B. White, M. Raymond, M. Ramon, R. Gregory, R. Rai, and X.-D. Wang, Physical and Electrical Characteristics of ALD HfxTiyO, 5th International Conference on Atomic Layer Deposition 2005, 8-10 August 2005, San Jose, CA.
  90. B.-Y. Nguyen, V. Vartanian, A. Thean, D. Zhang, M. Sadaka, A. Vandooren, T.R. White, L. Mathew, V. Dhandapani, B. Goolsby, M. Zavala, L. Prabhu, D. Triyoso, J. Schaeffer, S. Zollner, M. Kottke, M. Canonico, B. Xie, X.-D. Wang, L. McCormick, J. Hackenberg, J. Hildreth, R. Villapando, A. Barr, V. Kaushik, D. Pham, M. Mendicino, M. Orlowski, S. Venkatesan, and J. Mogab, Processes, Materials, and Device Architectures for 65nm Technologies and Beyond, SEMICON Europa 2005, Munich, Germany, 14 April 2005 (keynote talk).
  91. D. Triyoso, D. Roan, M. Ramon, R. Gregory, P. Tobin, R. Hegde, B. White, S. Zollner, X.-D. Wang, Engineering the interface properties of HfO2 by Ti addition, 36th IEEE Interface Specialists Conference, December 2005.
  92. Z. Song, R.D. Geil, B. Rogers, N.D. Theodore, M.L. Kottke, and S. Zollner, Initial Stage Deposition of ZrO2 from Zirconium t-Butoxide during High-Vacuum Chemical Vapor Deposition, AVS International Conference on Microelectronics and Interfaces, San Jose, CA, March 6-8, 2005.
  93. S. Zollner, S. Bolton, D. Jawarani, X. Zhu, M. Canonico, R.B. Gregory, Q. Xie, P.L. Fejes, M. Kottke, J. Alvis, R. Noble, C. Parker, M. Jahanbani, B.-Y. Nguyen, J. Cheek, Properties of nickel silicide formed by rapid thermal processing of thin Ni layers on Si (001), Gordon Conference on Chemistry of Electronic Materials, July 17-22, 2005, Connecticut College, New London, CT.
  94. T.E. Tiwald, J.N. Hilfiker, and S. Zollner, Dielectric function of bulk 4H SiC from 0.037 to 9.3 eV (0.138 to 33 μm) measured with generalized spectroscopic ellipsometry, 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ.
  95. S. Zollner, S. Bolton, D. Jawarani, X. Zhu, R.B. Gregory, J. Alvis, R. Noble, M. Jahanbani, B.-Y. Nguyen, Properties of nickel silicide formed by rapid thermal processing of thin Ni layers on Si (001), Texas Section Meeting of the American Physical Society, Houston, TX, 21 October 2005.
  96. M. Niranjan, S. Zollner, L. Kleinman, and A. Demkov, Electronic structure and Schottky barrier height of Si/PtSi interface, Texas Section Meeting of the American Physical Society, Houston, TX, 21 October 2005.
  97. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Schottky barrier height at Si(001)/PtSi(010) and Si(111)/ErSi2(001) interface, Bull. Am. Phys. Soc. (2006).
  98. S. Bolton, D. Jawarani, S. Zollner, M. Rossow, K. Chang, R. Noble, M. Jahanbani, J. Alvis, X. Zhu, V. Vartanian, and C.M. Chuang, Nickel silicide for 65nm CMOS: Preclean, thermal processing, and metrology, 2006 Materials for Advanced Metallization conference, March 6-8, Grenoble, France, p. 165-166.
  99. S. Zollner, S. Bolton, M. Rossow, K. Chang, R. Noble, M. Jahanbani, D. Jawarani, X. Zhu, V. Vartanian, M. Raymond, M. Kottke, R.B. Gregory, and J. Alvis, Thin-film metrology for nickel silicide process control, International Conference on Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.
  100. V. Vartanian, A. Thean, T. White, B.-Y. Nguyen, S. Zollner, D. Theodore, H. Desjardins, L. Prabhu, R. Garcia, G. Spencer, V. Dhandapani, S. Murphy, J. Conner, P. Fejes, R. Rai, C. Parker, J. Hildreth, R. Noble, M. Jahanbani, J. Mogab, and S. Venkatesan, Comparison of PMOS performance via global and local condensation, International Conference on Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.
  101. T. White, V. Vartanian, B.-Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, S. Zollner, D. Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, J. Hackenberg, V. Dhandapani, M. Canonico, V. Adams, S. Murphy, R. Rai, J. Conner, P. Montgomery, C. Parker, J. Hildreth, R. Noble, M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab, and S. Venkatesan, Uniaxial and biaxial strain for CMOS performance enhancement, International Conference on Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.
  102. M.K. Niranjan, S. Zollner, L. Kleinman, and A.A. Demkov, Schottky barrier height at Si(001)/PtSi(010) and Si(111)/ErSi2(001) interface, International Conference on Microelectronics and Interfaces, Austin, TX, March 6-8, 2006.
  103. K. Chang, S. Bolton, M. Rossow, R. Gregory, J. Jiang, D. Jawarani, S. Zollner, and J. Cheek, Implementing an in situ surface preparation prior to Ni deposition for Ni salicide processes, Eigth International Symposium on Ultra Clean Processing of Semiconductor Surfaces, Antwerp, Belgium, 18-20 September, 2006.
  104. K. Chang, S. Zollner, D. Jawarani, S. Bolton, R. Noble, M. Jahanbani, M. Raymond, D. Denning, M. Rossow, R. Gregory, J. Alvis, D. Eades, G. Karve, and J. Cheek, Evolution of near-noble metals on Si after thermal annealing observed with x-ray metrology, Second Workshop on Contacting Materials for Advanced Semiconductor Devices, 22 September 2006, Gent, Belgium.
  105. G. Karve, T. White, D. Eades, M. Sadaka, G. Spencer, J. Hackenberg, J. Norbert, T. Kropewnicki, S. Zollner, P. Beckage, J. Grant, R. Garcia, Bich-yen Nguyen, N. Cave, M. Hall, J. Cheek, S. Venkatesan, C. Lin, and I. Wu, Dual Substrate Orientation integration for high performance (110) PMOS, 210th Meeting of the Electrochemical Society, 02 November 2006, Cancun, MX.
  106. S. Pozder, R. Jones, J.-Q. Lu, M. Canonico, S. Zollner, V. Adams, and S. Rauf, Exploration of the Scaling Limits of 3D Integration (invited), Mat. Res. Soc. 2006 Fall Meeting, Boston, MA.
  107. T. White, V. Vartanian, B.-Y. Nguyen, D. Zhang, A. Thean, P. Grudowski, S. Zollner, D. Theodore, B. Goolsby, H. Desjardins, L. Prabhu, R. Garcia, D. Tekleab, J. Hackenberg, V. Dhandapani, M. Canonico, V. Adams, S. Murphy, R. Rai, J. Conner, P. Montgomery, C. Parker, J. Hildreth, R. Noble, M. Jahanbani, D. Eades, J. Cheek, B. White, J. Mogab, and S. Venkatesan Strain Engineering for Performance Scaling (invited), Semicon West, San Francisco, CA, 19 July 2006.
  108. S. Zollner, D. Jawarani, S. Bolton, K. Chang, R. Noble, M. Jahanbani, and M. Rossow, Evolution of Ni on Si after thermal annealing observed with XRR, Fall 2006 Meeting of the Texas Section of the American Physical Society, Arlington, TX, 06 October 2006.
  109. S. Zollner, Silicide nanowires for CMOS contacts (invited), APS 2007 March meeting, Denver, CO, 6 March 2007.
  110. D. Denning, S. Zollner, S. Bolton, M. Rossow, M. Jahanbani, K. Chang, D. Goedeke, P. Grudowski, R. Noble, D. Jawarani, R. Gregory, M. Kottke, Platinum Silicide Contacts for PMOS Transistors, Materials for Advanced Metallization 2007, Bruges, Belgium, March 4-7, 2007.
  111. V. Vartanian, K. Junker, J. Smith, D. Triyoso, M. Raymond, S. Zollner, D. Roan, J. Hildreth, V. Dhandapani, and R. Powers, X-Ray Metrology for 45nm and Beyond, 2007 International Conference on Frontiers of Characterization and Metrology Gaithersburgh, MD, March 2007.
  112. H. Bentmann, A.A. Demkov, S. Zollner, and R. Gregory, Electrical and optical properties of PtSi thin films, Bull. Am. Phys. Soc. (2008).
  113. S. Zollner, P. Grudowski, V. Dhandapani, G. Spencer, and A. Thean, Thermal stability and laser annealing of Si1−yCc alloys, Bull. Am. Phys. Soc. (2008).
  114. S. Zollner, P. Grudowski, V. Dhandapani, S. Bo, D. Zhang, J. Schaeffer, A. Thean, T. White, B.-Y. Nguyen, Nanoscale materials and structures for CMOS devices, Third Annual Arizona Nanotechnology Cluster Symposium, Scottsdale, AZ 10 April 2008 (invited).
  115. S. Zollner, P. Grudowski, V. Dhandapani, G. Spencer, A. Thean, Dynamic reconfiguration of dopants in Si1−yCy alloys during laser annealing, 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 31 July 2008.
  116. R.I. Hegde, D.H. Trioyso, P.J. Tobin, J.K. Schaeffer, S.B. Samavedam, W.J. Taylor, C. Capasso, E. Luckowski, M. Moosa, A. Haggag, D. Roan, J. Nguyen, L. La, X.-D. Wang, S. Zollner, R. Gregory, R.S. Rai, M.W. Stoker, C.C. Hobbs, Hafnium zirconate (HfxZr1−xO2) dielectric and CET scaling challenges International Symposium on Higher-K Dielectrics at Stanford University, 22 August 2008, Stanford, CA (invited).
  117. X. Luo, A.A. Demkov, D. Triyoso, P. Fejes, R. Gregory, and S. Zollner, Combined theoretical and experimental study of thin hafnia films, Bull. Am. Phys. Soc. (2009).
  118. S. Zollner, Industrial Physics Careers: A Large Company Perspective (invited), American Physical Society March meeting, Pittsburgh, PA, 17 March 2009.
  119. Z. Zhang, A.S. Ozcan, C. Lavoie, S. Zollner, A. Domenicucci, A. Frye, C.E. Murray, D.-I. Lee, V. Arunachalam, B. Yang, P. Press, and S.V. Deshpande, Stress Limited Silicide Formation in Constrained Nano-dimensions, in Reliability and Materials Issues of Semiconductor Optical and Electrical Devices, MRS Fall Meeting, Boston, MA, November 30 - December 3, 2009.
  120. C.S. Cook and S. Zollner, Industrial Physics Careers: A Large Company Perspective (invited), Tutorial on Physics Careers in Industry and Government, American Physical Society March meeting, Portland, OR, 14 March 2010.
  121. S. Zollner, Spectroscopic ellipsometry for inline process control in the semiconductor industry (invited), 3rd NanoCharm Workshop on Non-Destructive Real Time Process Control, Berlin, Germany, October 13, 2010.
  122. S. Zollner, Leadership behaviors for successful industrial physicists (invited), American Society of Physics Teachers (AAPT) Winter meeting, Jacksonville, FL, January 8, 2011.
  123. S. Zollner, Leadership behaviors for successful industrial physicists, American Physical Society March meeting, Dallas, TX, 20 March 2011 (career workshop invited talk).
  124. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Dielectric function of Ni-Pt alloys from 0.6 to 6.6 eV by spectroscopic ellipsometry, Four Corners Section Meeting of the American Physical Society, Tucson, AZ, Oct. 20-21, 2011.
  125. A.A. Medina, L.S. Abdallah, and S. Zollner, Temperature dependence of the dielectric function of Germanium by spectroscopic ellipsometry, Four Corners Section Meeting of the American Physical Society, Tucson, AZ, Oct. 20-21, 2011.
  126. S. Zollner, Characterization of complex metal oxides using spectroscopic ellipsometry and other techniques, DoD Workshop on “Complex Oxide and Multiferroic Thin Film Materials Science, Technologies, and Applications”, 26 January 2012, Tucson, AZ (invited).
  127. M. Spies, L.S. Abdallah, S. Zollner, C.V. Weiss, J. Zhang, S.P. Alpay, and M.W. Cole, Dielectric and optical properties of SrTiO3 films deposited from metallo-organic solution, American Physical Society March meeting, Boston, MA, 1 March 2012.
  128. L. Abdallah, S. Zollner, T. Tawalbeh, I. Vasiliev, C. Lavoie, A. Ozcan, and M. Raymond, Dielectric function of Ni-Pt alloys from 0.6 to 6.6 eV by spectroscopic ellipsometry, American Physical Society March meeting, Boston, MA, 29 February 2012.
  129. S. Zollner, Objectives and Assessment of the NMSU Physics Ph.D. program, American Physical Society April Meeting, Atlanta, GA, 31 March 2012, (invited).
  130. C.A. Rodriguez, C.M. Nelson, L.S. Abdallah, and S. Zollner, Determination Of RGB color coordinates from spectroscopic reflectance measurements, AVS 2012 New Mexico Symposium, Albuquerque, NM, May 22nd 2012.
  131. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Preparation of abrupt LaAlO3 surfaces monitored by spectroscopic ellipsometry, AVS 2012 New Mexico Symposium, Albuquerque, NM, May 22nd 2012.
  132. S. Zollner, Pirates, Spark Plugs, and Cell Phones: Physicists in Global R&D Careers, 2012 Physics Department Chairs Conference, College Park, MD, 09 June 2012 (invited).
  133. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, H. Luo, Preparation of Abrupt LaAlO3 Surfaces Monitored by Spectroscopic Ellipsometry, The Seventh Multifunctional Materials Workshop (MFM-7), Gamboa, Panama, August 5-9 2012 (invited).
  134. S. Zollner, ”Das Goggomobil” or Eight Simple Rules for Industrial Physics Careers, Conference for Undergraduate Women in Physical Sciences, October 18-20, 2012, Lincoln, NE (invited).
  135. L.S. Abdallah, Stefan Zollner, Tarek Tawalbeh, Igor Vasiliev, Christian Lavoie, Ahmet Ozcan, and Mark Raymond, Composition dependence of the optical constants of NiPt alloys determined by spectroscopic ellipsometry, Conference for Undergraduate Women in Physical Sciences, October 18-20, 2012, Lincoln, NE (invited).
  136. C.A. Rodriguez, C.M. Nelson, L.S. Abdallah, and S. Zollner, Determination Of RGB color coordinates from spectroscopic reflectance measurements, Annual Meeting of the Four Corners Section of the American Physical Society, Socorro, NM, October 26th, 2012.
  137. T. Willett-Gies, E. DeLong, S. Zollner, L.S. Abdallah, and I. Brener, Infrared Lattice Dynamics of LaAlO3, Annual Meeting of the Four Corners Section of the American Physical Society, Socorro, NM, October 26th, 2012.
  138. L.S. Abdallah, T. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Composition dependence of the optical conductivity of NiPt alloys determined by spectroscopic ellipsometry, Annual Meeting of the Four Corners Section of the American Physical Society, Socorro, NM, October 26th, 2012.
  139. A.A. Medina, L.S. Abdallah, and S. Zollner, Temperature Dependence of the Dielectric Function of Germanium by Spectroscopic Ellipsometry, AVS 2012 International Symposium, Tampa, FL.
  140. C.M. Nelson, M. Spies, L.S. Abdallah, S. Zollner, Y. Xu, and H. Luo, Preparation of Abrupt LaAlO3 Surfaces Monitored by Spectroscopic Ellipsometry, AVS 2012 International Symposium, Tampa, FL.
  141. L.S. Abdallah, T. Tawalbeh, I.V. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, M. Raymond, Compositional dependence of the dielectric function and optical conductivity of NiPt alloy thin films, AVS 2012 International Symposium, Tampa, FL.
  142. A.A. Medina, L.S. Abdallah, E. DeLong, and S. Zollner, Determination of the dielectric function of germanium as a function of temperature, AAAS 2013 Emerging Researchers National Conference in STEM, Washington, DC, March 1st, 2013.
  143. T. Willett-Gies, E. DeLong, and S. Zollner, Infrared Lattice Dynamics of LaAlO3, AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.
  144. C.J. Zollner, T. Willett-Gies, and S. Zollner, FTIR Ellipsometry Studies of Spinel (MgAl2O4) AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.
  145. C.M. Nelson, M. Spies, L.S. Abdallah, and S. Zollner, Preparation of abrupt LaAlO3 surfaces monitored by spectroscopic ellipsometry, AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.
  146. C. Rodriguez, K. Mitchell, S. Zollner, T. Willett-Gies, and L. Abdallah, Optical Constants of Thin Film Metal Oxides, AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.
  147. L. Abdallah, T. Tawalbeh, I. Vasiliev, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical Constants of Ni-Pt and Ni-Pt-Si thin films AVS 2013 New Mexico Symposium, Albuquerque, NM, May 21st, 2013.
  148. T. Willett-Gies, E. DeLong, and S. Zollner, Infrared lattice dynamics of LaAlO3, International Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.
  149. L. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constants of Ni-Pt and Ni-Pt-Si thin films, International Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.
  150. C.J. Zollner, T. Willett-Gies, and S. Zollner, FTIR ellipsometry studies of spinel (MgAl2O4), International Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.
  151. A.A. Medina, C.M. Nelson, C.A. Acheampong, L.S. Abdallah, and S. Zollner, Temperature dependence of the E0 and E0 + Δ0 critical points in Ge, International Conference on Spectroscopic Ellipsometry, Kyoto, Japan, May 26-31, 2013.
  152. S. Zollner, Precision Measurements of Optical Constants using Spectroscopic Ellipsometry, 2013 CMOS Emerging Technologies Research Symposium, 7/17-19/2013, Whistler, BC (invited).
  153. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure of Spinel (MgAl2O4) determined using FTIR and VUV ellipsometry, Cornell Diversity in Scholarship & Engagement Symposium, Ithaca, NY, 9/24/13.
  154. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, and S. Zollner, Dynamic Strain Measurements of Ge on Si using Spectroscopic Ellipsometry, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.
  155. T.N. Nunley, T.I. Willett-Gies, and S. Zollner Infrared and visible dielectric properties of (LaAlO3)0.3(Sr2AlTaO6)0.7, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.
  156. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure of Spinel (MgAl2O4) determined using FTIR and VUV ellipsometry, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.
  157. L.G. Pineda, L.S. Abdallah, and S. Zollner, Optical Properties of Bulk Nickel as a Function of Temperature, Rio Grande Symposium, Albuquerque, NM, 07 October 2013.
  158. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, and S. Zollner, Dynamic strain measurements of Ge on Si using spectroscopic ellipsometry, Michigan Section of the American Association of Physics Teachers, Roscommon, Michigan, 11-12 October 2013.
  159. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, and S. Zollner, Experimental and Theoretical Investigation of Critical Point Energy Shift of Ge Films Grown on Si (100) Substrate due to Strain, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.
  160. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constants of Ni1−xPtx silicides from spectroscopic ellipsometry, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.
  161. L.G. Pineda, L.S. Abdallah, and S. Zollner, Optical Properties of Bulk Nickel as a Function of Temperature, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.
  162. K.N. Mitchell, C. Rodriguez, T. Willett-Gies, Y. Li, and S. Zollner, Optical properties of Sm doped CeO2 thin films produced by liquid solution deposition, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.
  163. T.N. Nunley, T. Willett-Gies, and S. Zollner Infrared and Visible Dielectric Properties of (LaAlO3)0.3(Sr2AlTaO6)0.7, American Physical Society Four Corners Section Meeting, 10/18-19/2013, Denver, CO.
  164. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, and S. Zollner, Investigation of Dynamic Strains of Ge Films on Si using Spectroscopic Ellipsometry, Conference for Undergraduate Women in Physical Sciences, October 24-26, 2013, Lincoln, NE (invited).
  165. C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and S. Zollner, Electronic and vibrational properties of nickel oxide using spectroscopic ellipsometry, AVS 60th International Symposium, 27 October to 1 November, 2013, Long Beach, CA.
  166. T. Willett-Gies, C.J. Zollner, E. DeLong, and S. Zollner, Vibrational properties of lanthanum aluminate and magnesium aluminate spinel using Fourier transform infrared ellipsometry, AVS 60th International Symposium, 27 October to 1 November, 2013, Long Beach, CA.
  167. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Optical constants of Ni1−xPtx silicides from spectroscopic ellipsometry, AVS 60th International Symposium, 27 October to 1 November, 2013, Long Beach, CA.
  168. K. Mitchell, C. Rodriguez, T.I. Willett-Gies, Y. Li, and S. Zollner, Properties of Sm doped CeO2 thin films prepared by liquid solution deposition, AVS 60th International Symposium, 27 October to 1 November, 2013, Long Beach, CA.
  169. S. Zollner, Electronic and Vibrational Properties of Complex Metal Oxides, Electronic Materials and Applications 2014, Orlando, FL, January 22-24, 2014 (invited).
  170. A. Ghosh, N. Fernando, C.M. Nelson, A.A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, S. Zollner, Dynamic Strain Measurements of Ge on Si using Spectroscopic Ellipsometry, 41st International Conference on the Physics and Chemistry of Surfaces and Interfaces, January 12-16, 2014, Santa Fe, NM.
  171. K. Mitchell, C. Rodriguez, T. Willett-Gies, Y. Li, and S. Zollner, Optical properties of Sm doped CeO2 thin films prepared by liquid solution deposition, 41st International Conference on the Physics and Chemistry of Surfaces and Interfaces, January 12-16, 2014, Santa Fe, NM.
  172. C.J. Zollner, T. Willett-Gies, and S. Zollner, Vibrational and Electronic Structure of Spinel (MgAl2O4) determined using FTIR and VUV ellipsometry, 2014 Emerging Researchers National (ERN) Conference in STEM, Washington, DC, 2/20-22/2014.
  173. A. Ghosh, N. Fernando, A.A. Medina, C.M. Nelson, S. Zollner, S.C. Xu, J. Menendez, and J. Kouvetakis, Strain measurements of Ge epilayers on Si by spectroscopic ellipsometry, American Physical Society March meeting, Denver, CO, 3-7 March 2014.
  174. S. Zollner, C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and A. Ghosh, Dielectric function of NiO and Si from 25 meV to 6 eV: What’s the difference? American Physical Society March meeting, Denver, CO, 3-7 March 2014.
  175. L. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, M, Raymond, Infrared optical conductivity for Ni1−xPtx alloys and Ni1−xPtxSi monosilicides, American Physical Society March meeting, Denver, CO, 3-7 March 2014.
  176. A. Posadas, C. Lin, S. Zollner, and A. Demkov, Bandgap engineering of SrTiO3 via Al-substitution, American Physical Society March meeting, Denver, CO, 3-7 March 2014.
  177. K. Kormondy, A. Posadas, A. Slepko, A. Dhamdhere, D. Smith, K. Mitchell, S. Zollner, L. Marshall, J. Zhou, and A. Demkov, Epitaxy of polar semiconductor Co3O4 (110): growth, structure, and characterization, American Physical Society March meeting, Denver, CO, 3-7 March 2014.
  178. N. Fernando, A. Ghosh, T. Willett-Gies, C. Nelson, A. Medina, S.C. Xu, J. Menendez, J. Kouvetakis, S. Zollner, Thermal Strain Effects in Germanium Thin Films on Silicon, American Institute of Aeronautics and Astronautics Region IV Student Conference, Albuquerque, NM, April 24-26, 2014.
  179. S. Zollner, C.M. Nelson, A. Ghosh, T.I. Willett-Gies, and L.S. Abdallah, Band structure and phonons of bulk NiO, The Ninth International Multifunctional Materials Workshop (MFM-9), Shimla, India, June 1-5, 2014 (invited).
  180. L.S. Abdallah, S. Zollner, C. Lavoie, A. Ozcan, and M. Raymond, Infrared optical conductivity for Ni1−xPtx alloys and Ni1−xPtxSi monosilicides, 36th Symposium on Applied Surface Analysis, Albuquerque, NM, June 2-6, 2014.
  181. Stefan Zollner, Cayla M. Nelson, Travis I. Willett-Gies, and Ayana Ghosh, Dielectric Function of NiO from 25 meV to 6 eV: Comparison with Silicon, International Conference on the Physics of Semiconductors, Austin, TX, August 10-15, 2014.
  182. Kristy Kormondy, Agham Posadas, Alexander Slepko, Ajit Dhamdhere, David Smith, Khadijih Mitchell, Travis Willett-Gies, Stefan Zollner, Luke Marshall, Jianshi Zhou, and Alex Demkov Epitaxy of Polar Semiconductor Co3O4 (110): Growth, Structure, & Characterization, International Conference on the Physics of Semiconductors, Austin, TX, August 10-15, 2014.
  183. A. O’Hara, M. Choi, A.B. Posadas, C.A. Rodriguez, H. Seinige, A.J. Kellock, M.M. Frank, M. Tsoi, S. Zollner, V. Narayanan, and A.A. Demkov, Designing Conductive Layers for Fully Integrated Oxide Electronics, 45th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, Dec. 10-13, 2014.
  184. Luis A. Barrera, Khadijih N. Mitchell, Lina S. Abdallah, S. Zollner, N. Pachauri, and A. Gupta, Dielectric Function of Nickel Ferrite Thin Films from 0.8 to 6.5 eV, Rio Grande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.
  185. Stefan Zollner, Khadijih N. Mitchell, Travis I. Willett-Gies, Kristy J. Kormondy, Agham B. Posadas, Alexander Slepko, and Alexander A. Demkov, Dielectric Function of Co3O4 Thin Films from the mid-infrared to the near-UV, Rio Grande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.
  186. Lina S. Abdallah, Travis I. Willett-Gies, Eric Delong, and Stefan Zollner, Infrared Optical Conductivity of Ni1−xPtx alloys and Ni1−xPtxSi Monosilicides, Rio Grande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.
  187. T. Nathan Nunley, Stefan Zollner, Agham B. Posadas, Andrew O’Hara, and Alexander A. Demkov, Optical Constants of NbO2 on LSAT grown by MBE from 0.2 to 6.5 eV, Rio Grande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.
  188. D. Trujillo, L.G. Pineda, and S. Zollner, Temperature dependence of the dielectric function of Ni near the Curie temperature, Rio Grande Symposium on Advanced Materials, Albuquerque, NM, October 6, 2014.
  189. K.N. Mitchell, T.I. Willett-Gies, S. Zollner, K.J. Kormondy, A.B. Posadas, A. Slepko, A.A. Demkov, Temperature dependence of the dielectric function and band gap of Co3O4 thin films from the mid-infrared to the near-UV (invited), Electronic Materials and Applications 2015, Orlando, FL, January 21 - 23, 2015.
  190. Y. Cui, W. Geerts, F. Twagirayezu, S. Zollner, IR Ellipsometry on RF sputtered Permalloy Oxide thin films, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  191. Alexander Demkov, Miri Choi, Matthew Butcher, Cesar Rodriguez, Qian He, Agham Posadas, Albina Borisevich, Stefan Zollner, Chungwei Lin, and Elliott Ortmann, Optical properties of transition metal oxide quantum wells, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  192. C. Xu, J. Gallagher, C. Senaratne, C. Brown, S. Zollner, J. Kouvetakis, and J. Menendez, Doping and strain dependence of the electronic band structure in Ge and GeSn alloys, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  193. T.N. Nunley, S. Zollner, T. Hadamek, A.B. Posadas, A. O’Hara, and A.A. Demkov, Ellipsometric Study of NbO2 Grown by MBE on LSAT from 77 to 800 K, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  194. N. Fernando, T.N. Nunley, S. Zollner, S. Xu, J. Menendez, and J. Kouvetakis, Temperature dependent band gaps of GeSiSn alloys grown on Ge buffered Si substrates, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  195. S. Zollner, D. Trujillo, L. Pineda, and L. Abdallah, Temperature dependence of the dielectric function of Ni near the Curie temperature, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  196. Mark Sholte, Chungwei Lin, Kristy Kormondy, Timothy Nunley, Agham Posadas, Stefan Zollner, and Alexander Demkov, Investigation of the Band Gap in Co3O4, American Physical Society March meeting, San Antonio, TX, March 2-6, 2015.
  197. Alexander A. Demkov, Agham B. Posadas, Tobias Hadamek, Andrew O’Hara, Timothy N. Nunley, Sylvie Rangan, Stefan Zollner, and Robert A. Bartynski, Growth and electronic properties of epitaxial NbO2, 18th European Molecular Beam Epitaxy Workshop, Canazei, TN, Italy, March 15-18, 2015.
  198. Dennis P. Trujillo, Laura Pineda, Lina Abdallah, and Stefan Zollner, Temperature Dependence of the Dielectric Function of Ni near the Curie Temperature, AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.
  199. Nalin Fernando, Timothy Nunley, Stefan Zollner, Dainan Zhang, Ryan Hickey, James Kolodzey, Compositional and strain dependence of the band gaps of pseudomorphic Ge1−ySny alloys on Ge, AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.
  200. D. Lidsky, S. Zollner, M. Zamiri, A. Iurov, B. Klein, S. Krishna, Variable Angle Spectroscopic Ellipsometer Characterization of InAs/GaSb Type-II Strain Layer Superlattice, AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.
  201. Luis A. Barrera, Khadijih N. Mitchell, Lina S. Abdallah, Stefan Zollner, N. Pachauri, Arunava Gupta, Determination of the Electronic Structure of Nickel Ferrite Thin Films, AVS 2015 New Mexico Symposium, Albuquerque, NM, May 19th, 2015.
  202. A. Ghosh, C.M. Nelson, T. Willett-Gies, L.S. Abdallah, and S. Zollner, Lattice Dynamics and Electronic Structure of NiO, CINT User’s Meeting, 21 September 2015, Santa Fe, NM.
  203. J. Moya, N.S. Samarasingha, and S. Zollner, Comparison of LiF and NiO crystallographic structure using XRD, APS National Mentoring Community and Bridge Program Conference, Miami, FL, 10 October 2015.
  204. A. Ghosh, C.M. Nelson, L.S. Abdallah, and S. Zollner, Optical constants and band structure of NiO, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  205. S. Zollner, How thick is my film?, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ (invited).
  206. J. Moya, N. Samarasingha, and S. Zollner, Comparison of LiF and NiO crystallographic structure using XRD, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  207. C. Rodriguez, N. Samarasingha, J. Moya, S. Zollner, P. Ponath, and A. Demkov, Comparison of the dielectric function of SrTiO3 on SrTiO3, Si, and Ge substrates, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  208. T.N. Nunley, N. Fernando, J. Moya, C.M. Nelson, and S. Zollner, Growth and properties of Ge thermal oxides, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  209. N. Samarasingha, J. Moya, S. Zollner, S. Chattopadhyay, P. Ponath, and A. Demkov, Structural properties of SrTiO3 thin films on semiconductors, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  210. N. Fernando, J. Moya, S. Zollner, J. Hart, D. Zhang, R. Hickey, R. Hazbun, and J. Kolodzey, Strain dependence of the band structure and critical points of pseudomorphic Ge1−ySny alloys on Ge, APS Four Corners Section Meeting, 16 October 2015, Tempe, AZ.
  211. N. Fernando, T.N. Nunley, S. Zollner, D. Zhang, R. Hickey, J. Kolodzey, Band Structure and Critical Points of Pseudomorphic Ge1−ySny Alloys on Ge, AVS 62nd International Symposium and Exhibition, San Jose, CA, 19 October 2015.
  212. A. Ghosh, T. Willett-Gies, C. Nelson, L. Abdallah, and S. Zollner, Phonon Dispersion and Electronic Band Structure of NiO, AVS 62nd International Symposium and Exhibition, San Jose, CA, 22 October 2015.
  213. N. Samarasingha, C. Rodriguez, J. Moya, S. Zollner, N. Fernando, S. Chattopadhyay, P. Ponath, and A.A. Demkov, Structural and optical properties of SrTiO3 thin films on semiconductors, 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces, Palm Springs, CA, 17-21 January 2016.
  214. N. Samarasingha, C. Rodriguez, J. Moya, S. Zollner, N. Fernando, S. Chattopadhyay, P. Ponath, and A.A. Demkov, Structural and optical properties of SrTiO3 thin films on different substrates, 2016 Lawrence Symposium on Epitaxy, 21-24 February 2016, Scottsdale, AZ.
  215. T.N. Nunley, N. Fernando, J. Moya, and S. Zollner, Optical constants of Ge and GeO2 from ellipsometry, 80. Jahrestagung der DPG und DPG-Frühjahrstagung, 6-11 March 2016, Regensburg, Germany.
  216. S. Zollner, C.M. Nelson, T.I. Willett-Gies, A. Ghosh, and L.S. Abdallah, Electronic band structure and infrared lattice dynamics of single-crystal nickel oxide (NiO), 80. Jahrestagung der DPG und DPG-Frühjahrstagung, 6-11 March 2016, Regensburg, Germany.
  217. A.A. Taludker, Y. Cui, M. Compton, W. Geerts, L. Scolfaro, and S. Zollner, FTIR ellipsometry study on RF sputtered Ni81Fe19O thin films, Materials Research Society Spring Meeting, Symposium EP11.6.16, 30 March 2016 .
  218. J.M. Moya, T.N. Nunley, D.P. Adams, and S. Zollner, Optical properties of Ni and Ni:V alloys, AVS 2016 New Mexico Symposium, Albuquerque, NM, May 24th, 2016.
  219. J. Cooke, T.N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielectric properties of (LaAlO3)0.3(Sr2AlTaO6)0.35, AVS 2016 New Mexico Symposium, Albuquerque, NM, May 24th, 2016.
  220. N.S. Fernando, R. Hickey, J. Hart, R. Hazbun, D. Zhang, J. Kolodzey, and S. Zollner, Band structure of pseudomorphic Ge1−x−ySixSny on Ge, AVS 2016 New Mexico Symposium, Albuquerque, NM, May 24th, 2016.
  221. T.N. Nunley, N.S. Fernando, N. Samarasingha, J.M. Moya, C.M. Nelson, A.A. Medina, and S. Zollner, Optical characterization of Ge and Ge thermal oxides, AVS 2016 New Mexico Symposium, Albuquerque, NM, May 24th, 2016.
  222. Nalin S. Fernando, T. Nathan Nunley, Ayana Ghosh, Jacqueline A. Cooke, Amber A. Medina, Chi Xu, John Kouvetakis, Stefan Zollner, Temperature dependence of the dielectric function of tensile Ge on Si, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10 June 2016.
  223. T. Nathan Nunley, Nalin S. Fernando, Jaime M. Moya, Cayla M. Nelson, Amber A. Medina, Stefan Zollner Optical constants of Ge and thermally grown GeO2 from 0.5 to 6.6 eV via multi-sample ellipsometry, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10 June 2016.
  224. Stefan Zollner, Dennis P. Trujillo, Laura G. Pineda, Lina S. Abdallah, Temperature-dependent dielectric function of Nickel: Isotropic or anisotropic magneto-optic effect, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10 June 2016.
  225. T. Nathan Nunley, Travis I. Willett-Gies, Stefan Zollner, Band gap and infared-active phonons of LSAT, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10 June 2016.
  226. Dipayan Pal, Aakash Mathur, Ajaib Singh, Surjendu Dutta, Jaya Singhal, Stefan Zollner, Sudeshna Chattopadhyay, Effect of Confinement on Optical Properties in ALD grown ZnO, Seventh International Conference on Spectroscopic Ellipsometry, Berlin, Germany, 6-10 June 2016.
  227. Stefan Zollner, Nuwanjula Samarasingha, Cesar Rodriguez, Jaime Moya, Nalin Fernando, Patrick Ponath, Kristy Kormondy, Alex Demkov, Dipayan Pal, Aakash Mathur, Ajaib Singh, Surjendu Dutta, Jaya Singhal, and Sudeshna Chattopadhyay, Excitons at interfaces in ellipsometric spectra, 2016 AVS Texas Chapter Conference, 3-4 August 2016, Richardson, TX.
  228. S. Zollner, Time-Resolved Ellipsometry: A Historical Perspective, ELIps Workshop, Prague, Czech Republic, October 10-12, 2016.
  229. N. Fernando, S. Zollner, R. Hickey, J. Hart, R. Hazbun, D. Zhang, and J. Kolodzey, Band gap engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge for photonic applications, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  230. F. Abadizaman, J. Moya, and S. Zollner, Experimental Errors in Mueller Matrix Elements of Isotropic Samples, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  231. Nuwanjula Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath, K. Kormondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S. Chattopadhyay, Excitons at interfaces in thin oxide films, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  232. J.A. Cooke, T.N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielectric properties of LSAT, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  233. Qi Zhou, Alexandra P. Hartman, Hongmei Luo, and Stefan Zollner, Spectroscopic ellipsometry of NiO and Co3O4 thin films with different orientations grown on SrTiO3 substrates by polymer-assisted deposition, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  234. Stefan Zollner, T.N. Nunley, D.P. Trujillo, L.G. Pineda, and L.S. Abdallah, Temperature-dependent dielectric function of nickel, Joint Meeting of the Four Corners and Texas Sections of the American Physical Society, Las Cruces, NM, October 21-22, 2016.
  235. J.M. Moya, T.N. Nunley, N. Fernando, N. Samarasingha, and S. Zollner, FTIR ellipsometry studies of thermally grown GeO2 on Ge, AVS 63rd International Symposium and Exhibition, Nashville, TN, 6-11 November 2016.
  236. N. Fernando, R. Hickey, J. Hart, R. Hazbun, D. Zhang, J. Kolodzey, and S. Zollner, Effects of composition and strain on band gaps of pseudomorphic Ge1−x−ySixSny on Ge, AVS 63rd International Symposium and Exhibition, Nashville, TN, 6-11 November 2016.
  237. J. Cooke, N. Nunley, T. Willett-Gies, and S. Zollner, Infrared and visible dielectric properties of (LaAlO3)0.3(Sr2AlTaO6)0.35, AVS 63rd International Symposium and Exhibition, Nashville, TN, 6-11 November 2016.
  238. N. Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath, K. Kormondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S. Chattopadhyay, Excitons at interfaces in ellipsometric spectra, AVS 63rd International Symposium and Exhibition, Nashville, TN, 6-11 November 2016.
  239. Nuwanjula Samarasingha, C. Rodriguez, J. Moya, N. Fernando, S. Zollner, P. Ponath, K. Kormondy, A. Demkov, D. Pal, A. Mathur, A. Singh, S. Dutta, J. Singhal, and S. Chattopadhyay, Excitons at oxide interfaces in ellipsometric spectra, Electronic Materials and Applications 2017, Orlando, FL, January 18-20 (2017).
  240. J. Moya, F. Abadizaman, and S. Zollner, Experimental Errors in Mueller Matrix Elements of Isotropic Samples, 2017 Emerging Researchers Conference in STEM, Washington, DC, 02-04 March 2017.
  241. Stefan Zollner, C. Rodriguez, N. Samarasingha, J. Moya, N. Fernando, P. Ponath, K. Kormondy, A.A. Demkov, and S. Chattopadhyay, Excitons at SrTiO3 and ZnO interfaces in ellipsometry spectra, DPG-Frühjahrstagung, 19-24 March 2017, Dresden, Germany.
  242. Farzin Abadizaman, Jaime M. Moya, and Stefan Zollner, Temperature-dependent Mueller matrix measurements of the optical constants of Ni near the Curie temperature, DPG-Frühjahrstagung, 19-24 March 2017, Dresden, Germany.
  243. Nuwanjula Samarasingha, Cesar Rodriguez, Jaime Moya, Nalin Fernando, Stefan Zollner, Patrick Ponath, Kristy J. Kormondy, Alex Demkov, Dipayan Pal, Aakash Mathur, Ajaib Singh, Surjendu Dutta, Jaya Singhal, and Sudeshna Chattopadhyay, Excitonic effect at interfaces in thin oxide films, AVS 2017 New Mexico Symposium, Albuquerque, NM, May 16th, 2017.
  244. Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, Nalin Fernando, and Stefan Zollner, Temperature dependence of the dielectric function of bulk Ge, AVS 2017 New Mexico Symposium, Albuquerque, NM, May 16th, 2017.
  245. Jacqueline Cooke, Tom Tiwald, Nuwanjula Samarasingha, Nalin Fernando, and Stefan Zollner, Near-infrared to vacuum ultraviolet (VUV) dielectric properties of LaAlO3, AVS 2017 New Mexico Symposium, Albuquerque, NM, May 16th, 2017.
  246. Farzin Abadizaman and Stefan Zollner, Temperature dependent Mueller matrix measurements of magnetised Ni near the Curie temperature, AVS 2017 New Mexico Symposium, Albuquerque, NM, May 16th, 2017.
  247. Stefan Zollner and Jose Menendez, Influence of temperature, strain, alloy composition, doping, and film thickness on the dielectric function of semiconductors (invited), ELIps Workshop, Prague, Czech Republic, 11-12 October 2017.
  248. Farzin Abadizaman and Stefan Zollner, Temperature dependent Mueller matrix measurements of magnetised Ni near the Curie temperature, AVS 64th International Symposium and Exhibition, Tampa, FL, 29 October - 3 November, 2017.
  249. Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, Nalin Fernando, and Stefan Zollner, Temperature dependence of the dielectric function and interband critical points of bulk germanium, AVS 64th International Symposium and Exhibition, Tampa, FL, 29 October - 3 November, 2017.
  250. Mateusz Rebarz, Shirly Espinoza, Steffen Richter, Oliver Herrfurth, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Femtosecond spectroscopic ellipsometry on optoelectronic materials and photonic structures, AVS 64th International Symposium and Exhibition, Tampa, FL, 29 October - 3 November, 2017.
  251. Rigo Carrasco, Nuwanjula Samarasingha, Bich-Yen Nguyen, and Stefan Zollner, Ellipsometry analysis of a Germanium-on-insulator wafer, AVS 64th International Symposium and Exhibition, Tampa, FL, 29 October - 3 November, 2017.
  252. R. Carrasco, N. Samarasingha Arachchige, C. Zamarripa, S. Zollner, S. Chastang, G. Grzybowski, J. Duan, B. Claflin, and A. Kiefer, Spectroscopic Ellipsometry and Band Structure of α-tin on InSb, AFRL Workshop on GeSn and GeSiSn, Dayton, OH, 10 January 2018.
  253. S. Zollner, Precision measurements of optical constants with spectroscopic ellipsometry, AFOSR Program Review, Dayton, OH, 1/11/2018.
  254. N.S. Fernando, R.A. Carrasco, R. Hickey, J. Hart, R. Hazbun, J. Kolodzey, and S. Zollner, Optical and structural characterization of pseudomorphic and relaxed Ge1−ySny alloys (y<18.5%) grown on Ge by MBE, Lawrence Symposium on Semiconductor Epitaxy, Scottsdale, AZ, 21 February 2018.
  255. N. Samarasingha Arachchige, Z. Yoder, S. Zollner, D. Pal, A. Mathur, A. Singh, R. Singh, and S. Chattopadhyay, Excitonic absorption and optical properties of ZnO thin films, APS March meeting, Los Angeles, CA, 3/8/2018.
  256. F. Abadizaman, P. Paradis, and S. Zollner, Temperature dependent Mueller matrix of magnetized Ni near the Curie temperature, APS March meeting, Los Angeles, CA, 3/8/2018.
  257. C. Emminger, N. Samarasingha Arachchige, F. Abadizaman, N. Fernando, and S. Zollner, Temperature dependence of the dielectric function and analysis of critical point parameters of bulk Ge, APS March meeting, Los Angeles, CA, 3/8/2018.
  258. R. Carrasco, N. Samarasingha Arachchige, B.-Y. Nguyen, and S. Zollner, Ellipsometric analysis of germanium-on-insulator wafers, APS March meeting, Los Angeles, CA, 3/8/2018.
  259. Stefan Zollner, Nuwanjula Samarasingha, Zachary Yoder, Dipayan Pal, Aakash Mathur, Ajaib Singh, Rinki Singh, and Sudeshna Chattopadhyay, Excitonic absorption and optical properties of ZnO films, DPG Frühjahrstagung, Berlin, 11-16 March 2018.
  260. S. Richter, O. Herrfurth, S.J. Espinoza Herrera, M. Rebarz, M. Grundmann, S. Zollner, J. Andreasson, and R. Schmidt-Grund, Femtosecond time-resolved spectroscopic ellipsometry, Ellipsometry Workshop Chemnitz, Germany, March 19-21, 2018 (invited).
  261. S. Zollner, Influence of temperature, strain, alloy composition, doping, and film thickness on the dielectric function of semiconductors, Ellipsometry Workshop Chemnitz, Germany, March 19-21, 2018 (invited).
  262. F. Abadizaman and S. Zollner, Mueller matrix anomaly near the Curie temperature of Ni, Ellipsometry Workshop Chemnitz, Germany, March 19-21, 2018.
  263. P. Paradis, R.A. Carrasco, S. Zollner, V. Dahiya, A. Kazemi, J. Carlin, S. Krishna, Mid-infrared optical constants of InAsSb alloys and bulk GaSb, Butler University 30th Annual Undergraduate Research Conference, 13 April 2018, Indianapolis, IN.
  264. S. Zollner, Skills and behaviors for sucessful industrial physicists, American Physical Society April Meeting, 15 April 2018, Columbus, OH (invited).
  265. C. Emminger, R. Carrasco, N. Samarasingha, F. Abadizaman, and S. Zollner, Temperature dependent dielectric function and critical points of bulk Ge compared to α-Sn on InSb, IEEE Photonics Society 2018 Summer Topical Workshop, 9-11 July 2018, Waikoloa, Hawaii.
  266. Steffen Richter, Shirly Espinoza, Mateusz Rebarz, Oliver Herrfurth, Miroslav Kloz, Marius Grundmann, Ruediger Schmidt-Grund, Stefan Zollner, Jakob Andreasson, fs-time-resolved ellipsometry to study the dynamics in the electronic density of states, 34th International Conference on the Physics of Semiconductors, 30 July 2018, Montpellier, France.
  267. Cesy M. Zamarripa, Nuwanjula Samarasingha, Farzin Abadizaman, Rigo A. Carrasco, and Stefan Zollner, Temperature-dependent ellipsometry and thermal stability of Ge2Sb2Te5:C phase change memory alloys, 2018 NMAVS Symposium and Exhibition, Albuquerque, NM, 22 May 2018.
  268. Nuwanjula Samarasingha, Stefan Zollner, Dipayan Pal, Aakash Mathur, Ajaib Singh, Rinki Singh, and Sudeshna Chattopadhyay, Phonon and exciton absorption in the optical properties of ZnO films, 2018 NMAVS Symposium and Exhibition, Albuquerque, NM, 22 May 2018.
  269. Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, and Stefan Zollner, Analysis of Critical Points in the Dielectric Function of Ge between 10 and 738 K, 2018 NMAVS Symposium and Exhibition, Albuquerque, NM, 22 May 2018.
  270. Farzin Abadizaman and Stefan Zollner, Anomaly in the Optical Constants of Ni near the Curie Temperature, 2018 NMAVS Symposium and Exhibition, Albuquerque, NM, 22 May 2018.
  271. Pablo Paradis, Rigo A. Carrasco, Stefan Zollner, Vinita Dahiya, Alireza Kazemi, John Carlin, and Sanjay Krishna, Mid-infrared optical constants of InAsSb alloys and bulk GaSb, 2018 NMAVS Symposium and Exhibition, Albuquerque, NM, 22 May 2018.
  272. P.T. Webster, P.C. Grant, S. Zollner, E.H. Steenbergen, G. Ariyawansa, C.J. Reyner, J.K. Kim, J.F. Klem, Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InGaAs/InAsSb Superlattices, 34th North American Molecular Beam Epitaxy Conference, 30 September to 5 October 2018, Banff, Alberta, Canada.
  273. P.T. Webster, P.C. Grant, S. Zollner, E.H. Steenbergen, G. Ariyawansa, C.J. Reyner, J.K. Kim, J.F. Klem, Minority Carrier Lifetime and Recombination Dynamics in Strain-Balanced InGaAs/InAsSb Superlattices, 14th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, 7-10 October, 2018, Flagstaff, AZ.
  274. Farzin Abadizaman and Stefan Zollner, Anomaly in the Optical Constants of Ni near the Curie Temperature, AVS 65th International Symposium and Exhibition, Long Beach, CA, 21 October 2018.
  275. Nuwanjula Samarasingha, Stefan Zollner, Dipayan Pal, Aakash Mathur, Ajaib Singh, Rinki Singh, and Sudeshna Chattopadhyay, Phonon confinement and excitonic absorption in the optical properties of ZnO films, AVS 65th International Symposium and Exhibition, Long Beach, CA, 21 October 2018.
  276. Cesy M. Zamarripa, Nuwanjula Samarasingha, Farzin Abadizaman, Rigo A. Carrasco, and Stefan Zollner, Temperature-dependent ellipsometry and thermal stability of Ge2Sb2Te5:C phase change memory alloys, AVS 65th International Symposium and Exhibition, Long Beach, CA, 22 October 2018.
  277. Rigo A. Carrasco, Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, and Stefan Zollner, Temperature dependent dielectric function and critical point comparison of bulk Ge and α-Sn on InSb, AVS 65th International Symposium and Exhibition, Long Beach, CA, 21 October 2018.
  278. Pablo Paradis, Rigo A. Carrasco, Stefan Zollner, Vinita Dahiya, Alireza Kazemi, John Carlin, and Sanjay Krishna, Mid-infrared optical constants of InAsSb alloys and bulk GaSb, AVS 65th International Symposium and Exhibition, Long Beach, CA, 22 October 2018.
  279. Rigo A. Carrasco, Cesy M. Zamarripa, Stefan Zollner, and Jose Menendez, The direct band gap of alpha-tin investigated by infrared ellipsometry, 46th Conference on the Physics and Chemistry of Surfaces and Interfaces, January 13-17, 2019, Santa Fe, NM.
  280. S. Zollner, Electrons and Phonons: Precision Measurements of Optical Constants with Spectroscopic Ellipsometry, Piezo 2019, Špindlerův Mlýn, Czech Republic, 30 January 2019.
  281. Shirly Espinoza, Steffen Richter, Oliver Herrfurth, Mateusz Rebarz, Stefan Zollner, Jakob Andreasson, and Rüdiger Schmidt-Grund, Time-resolved spectroscopic ellipsometry experiments on zinc oxide, Piezo 2019, Špindlerův Mlýn, Czech Republic, 29 January 2019.
  282. Carola Emminger, Nuwanjula S. Samarasingha, Farzin Abadizaman, and Stefan Zollner, Analysis of the critical point parameters of E0 and E0 + Δ0 of bulk Ge, APS March Meeting, Boston, MA, 4-8 March, 2019.
  283. Alireza Kazemi, Amin Ranjbar, Qingyuan Shu, Vinita Dahiya, Pablo Paradis, Christopher Ball, Theodore Ronningen, Stefan Zollner, Anthony Grbic, and Sanjay Krishna, Subwavelength antimonide infrared detector coupled with dielectric resonator antenna, SPIE Defense and Commercial Sensing (DCS) conference, Baltimore, MD, 14-18 April 2019 (submitted).
  284. Rigo A. Carrasco, Cesy M. Zamarripa, Stefan Zollner, and Jose Menendez, Direct band gap of alpha-tin investigated by infrared ellipsometry, DPG Frühjahrstagung, Regensburg, Germany, 31 March to 05 April 2019.
  285. Carola Emminger, Nuwanjula S. Samarasingha, Farzin Abadizaman, and Stefan Zollner, Investigation of the temperature dependence of the critical points E0 and E0 + Δ0 of bulk Ge, DPG Frühjahrstagung, Regensburg, Germany, 31 March to 05 April 2019.
  286. Shirly Espinoza, Steffen Richter, Oliver Herrfurth, Mateusz Rebarz, Stefan Zollner, Marius Grundmann, Jakob Andreasson, and Rüdiger Schmidt-Grund, Non-equilibrium (transient) experiments on zinc oxide, DPG Frühjahrstagung, Regensburg, Germany, 31 March to 05 April 2019.
  287. Steffen Richter, Shirly Espinoza, Oliver Herrfurth, Mateusz Rebarz, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Time-resolved spectroscopic ellipsometry on Ge and Si, DPG Frühjahrstagung, Regensburg, Germany, 31 March to 05 April 2019.
  288. Farzin Abadizaman, Carola Emminger, Sean Knight, Mathias Schubert, and Stefan Zollner, Optical Hall Effect in Te-doped GaSb and undoped InAs, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  289. Aakash Mathur, Dipayan Pal, Ajaib Singh, Rinki Singh, Stefan Zollner, Sudeshna Chattopadhyay, Thickness Dependent Optical and Electronic Properties of Semiconductor Thin-films for Energy Research, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  290. Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Rüdiger Schmidt-Grund, Jakob Andreasson, Nuwanjula Samarasingha, Stefan Zollner, Time-resolved spectroscopic ellipsometry on Ge and InP, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  291. Stefan Zollner, Pablo P. Paradis, Farzin Abadizaman, Nuwanjula S. Samarasingha, Factorized Broad-Band Description of the Dielectric Function Using a Modified Kukharskii Model, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  292. Steffen Richter, Shirly Espinoza, Oliver Herrfurth, Mateusz Rȩbarz, Stefan Zollner, Rüdiger Schmidt-Grund, Jakob Andreasson, Femtosecond transient spectroscopic ellipsometry on semiconductors, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  293. Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, and Stefan Zollner, Temperature Dependence of the Critical Point Parameters of the Direct Band Gap of Germanium, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  294. Rigo A. Carrasco, Cesy M. Zamarripa, Stefan Zollner, José Menéndez, The Direct Band Gap of α-Sn Investigated by Infrared Ellipsometry, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  295. Farzin Abadizaman and Stefan Zollner, Temperature Dependent Optical and Magneto-Optical Properties and Critical Points of Nickel, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  296. Nuwanjula Samarasingha, Stefan Zollner, Dipayan Pal, Aakash Mathur, Ajaib Singh, Rinki Singh, and Sudeshna Chattopadhyay, Thickness-dependent Optical Properties of ZnO Films from the Mid-infrared to the Vacuum-ultraviolet, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  297. D. Chvostova, T. Kocourek, M. Jelinek, S. Zollner, A. Dejneka, and M. Tyunina, Ellipsometric characterization of epitaxial metallic oxide SrRuO3 in a wide spectral range, 8th International Conference on Spectroscopic Ellipsometry, May 26-31st, 2019, Barcelona, Spain.
  298. Stefan Zollner and Farzin Abadizaman, Optical Constants of Ni at 300 K from 0.03 to 6.0 eV, AVS 66th International Symposium and Exhibition, Columbus, OH, 23 October 2019.
  299. Farzin Abadizaman, Carola Emminger, Sean Knight, Mathias Schubert, and Stefan Zollner, Optical Hall effect in the multi-valley semiconductor Te-doped GaSb, AVS 66th International Symposium and Exhibition, Columbus, OH, 23 October 2019.
  300. Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Ultrafast Dynamics of Ge, InP and Si Proved by Time-Resolved Ellipsometry, AVS 66th International Symposium and Exhibition, Columbus, OH, 23 October 2019.
  301. S. Zollner, Spectroscopic Ellipsometry at New Mexico State University, 4th ELIps User Workshop, Dolni Brezany, Czech Republic, 11-13 November 2019.
  302. R. A. Carrasco, S. Zollner, A. M. Kiefer, B. B. Claflin, S. A. Chastang, J. Duan, and G. J. Grzybowski, Electronic band structure and free carrier properties of strained tin-germanium alloys on InSb from FTIR ellipsometry, 2020 Lawrence Symposium on Epitaxy, 16-19 February 2020.
  303. N. Samarasingha Arachchige, S. Zollner, D. Pal, A. Mathur, A. Singh, R. Singh, and S. Chattopadhyay, Investigation of the thickness-dependent optical properties of ZnO films on Si and SiO2 substrates from the mid-infrared to the vacuum-ultraviolet using UV and FTIR spectroscopic ellipsometry, APS March meeting, Denver, CO, 3 March 2020 (canceled).
  304. R. A. Carrasco, S. Zollner, A. M. Kiefer, B. B. Claflin, S. A. Chastang, J. Duan, and G. J. Grzybowski, Electronic band structure and free carrier properties of strained tin-germanium alloys on InSb from FTIR ellipsometry, APS March meeting, Denver, CO, 3 March 2020 (canceled).
  305. R. A. Carrasco, S. Zollner, A. M. Kiefer, B. B. Claflin, S. A. Chastang, J. Duan, and G. J. Grzybowski, Electronic band structure and free carrier properties of strained tin-germanium alloys on InSb from FTIR ellipsometry, MRS Spring Meeting, Phoenix, AZ, 14 April 2020 (canceled).
  306. Carola Emminger, Farzin Abadizaman, Nuwanjula S. Samarasingha, and Stefan Zollner, Accurate temperature-dependent optical constants of germanium near the direct band gap, 2020 GeSiSn Workshop, Dayton, OH (online), 15-16 September 2020.
  307. N. Samarasingha and S. Zollner, Temperature dependence of optical phonon bands in GaP, APS Four Corners Section Meeting, 23-24 October 2020, Albuquerque, NM (online).
  308. Carola Emminger, Farzin Abadizaman, Nuwanjula S. Samarasingha, and Stefan Zollner, Analysis of Critical Points in Ellipsometry Spectra Using Digital Filtering, ELI Beamlines User Conference 2020, 13 October 2020, Dolni Brezany, Czech Republic (online).
  309. Farzin Abadizaman and Stefan Zollner, Temperature dependent optical properties of single-crystalline Ni (100), ELI Beamlines User Conference 2020, 13 October 2020, Dolni Brezany, Czech Republic (online).
  310. C. Emminger, F. Abadizaman, N. S. Samarasingha, J. Menendez, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradnik, R. Schmidt-Grund, J. Andreasson, and S. Zollner, Analysis of critical points in temperature dependent and time resolved ellipsometry spectra using digital filtering, APS March Meeting, March 15-19, 2021 (online).
  311. Jose Menendez, Chi Xu, John Kouvetakis, Nuwanjula Samarasingha Arachchige, Carola Emminger, and Stefan Zollner, GeSn alloys with mid-IR direct band gaps, APS March Meeting, March 15-19, 2021 (online) (invited).
  312. Nuwanjula Samarasingha Arachchige and Stefan Zollner, Temperature dependence of optical phonon bands in GaP, APS March Meeting, March 15-19, 2021 (online).
  313. C. Emminger, F. Abadizaman, N. S. Samarasingha, J. Menendez, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradnik, R. Schmidt-Grund, J. Andreasson, and S. Zollner, Computational analysis of critical points in temperature dependent and time resolved ellipsometry spectra of Ge using digital filtering, MRS Spring Meeting, April 17-23, 2021, (online).
  314. Nuwanjula Samarasingha Arachchige and Stefan Zollner, Temperature dependent optical phonon bands in GaP, 63rd Electronic Materials Conference, June 23-25, 2021 (online).
  315. C. Emminger, F. Abadizaman, N. S. Samarasingha, J. Menéndez, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradnik, R. Schmidt-Grund, J. Andreasson, and S. Zollner, Analysis of temperature-dependent and time-resolved ellipsometry spectra of Ge, IEEE Photonics Society 2021 Summer Topical Workshop, 19-21 July 2021 (online).
  316. Carola Emminger, Stefan Zollner, and José Menéndez, Dielectric function of Ge and related semiconductors near the direct band gap, 4th AFRL Workshop on GeSn and GeSiSn, Dayton, OH, 14-15 Sep 2021 (online).
  317. Carola Emminger, Shirly Espinoza, Steffen Richter, Oliver Herrfurth, Mateusz Rebarz, Martin Zahradník, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Transient Dielectric Function of Ge, Si, and InP from Femtosecond Pump-Probe Ellipsometry, DPG Tagung, Berlin, Germany, 27 September to 01 October 2021 (cancelled).
  318. Jaden Love, Carlos Armenta, Nuwanjula S. Samarasingha, Stefan Zollner, and Hyun Jung Kim, Optical constants of CaF2 at 300 K from 0.03 to 6.5 eV, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  319. Carola Emminger, Shirly Espinoza, Steffen Richter, Oliver Herrfurth, Mateusz Rebarz, Martin Zahradnik, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Analysis of the transient dielectric Function of Ge, Si, and InP from femtosecond pump-probe ellipsometry, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  320. Farzin Abadizaman, Jaden Love, and Stefan Zollner, Ellipsometry observation of magnetic phase transition of Ni, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  321. Nuwanjula Samarasingha and Stefan Zollner, Anharmonic decay of optical phonons in GaP, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  322. Haley Woolf, Carola Emminger, Carlos Armenta, Stefan Zollner, and Matt Kim, Optical and x-ray characterization of Ge-Sn alloys on GaAs grown by CVD, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  323. Melissa Rivero Arias, Nuwanjula S. Samarasingha, Carola Emminger, and Stefan Zollner, Temperature dependence of the direct band gap of InSb from 80 to 800 K, AVS International Symposium, Charlotte, NC, October 24-29, 2021 (cancelled).
  324. Carola Emminger, Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Oliver Herrfurth, Martin Zahradník, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner, Analysis of Femtosecond Pump-Probe Ellipsometry Data of Ge, Si, and GaSb, 11th Workshop Ellipsometry (WSE 11), Steyr, Austria, 6-8 September 2021.
  325. Hyun Jung Kim, Stefan Zollner, Juejun Hu, Yifei Zhang, Tian Gu, David Bombara, Matthew Julian, Calum Williams, Stephen Borg, and William Humphreys, Exotic Phase-Change Material MISSE-14 Experiment at ISS, Photonics West 2022, PW-OPTO: Optical Components and Materials XIX (OE103).
  326. Jaden Love, Carlos Armenta, Nuwanjula S. Samarasingha, Stefan Zollner, and Hyun Jung Kim, Optical constants of CaF2 at 300 K from 0.03 to 6.5 eV, 2021 New Mexico Research Symposium, New Mexico Journal of Science 55, 24 (2021).
  327. Melissa Rivero, Carola Emminger, Stefan Zollner, and Nuwanjula S. Samarasingha, Temperature dependence of the direct band gap of InSb from 80 to 800 K, American Physical Society March meeting, Chicago, IL, March 14-18, 2022.
  328. Jaden Love, Nuwanjula S. Samarasingha, Carlos Armenta, Stefan Zollner, and H. J. Kim, Optical constants of CaF2 at 300 K from 0.03 to 6.5 eV, American Physical Society March meeting, Chicago, IL, March 14-18, 2022.
  329. Haley B. Woolf, Carola Emminger, Carlos Armenta, Stefan Zollner, and Matt Kim, Optical and x-ray characterization of Ge-Sn alloys on GaAs, American Physical Society March meeting, Chicago, IL, March 14-18, 2022.
  330. Carola Emminger, Carlos Armenta, Stefan Zollner, Shirly Espinoza, Steffen Richter, Mateusz Rebarz, Martin Zahradník, Jakob Andreasson, Oliver Herrfurth, and Rüdiger Schmidt-Grund, Transient critical point parameters from femtosecond pump-probe ellipsometry, Time-resolved Ellipsometry Meeting, December 8-9, 2021, Dolní Břežany, Czech Republic.
  331. S. Jang, W. Guo, J. Warner, S. Zollner A. Posadas, H. Park, W. Li, and A. A. Demkov, Design of wide bandgap Al2O3/BaSnO3 quantum well, American Physical Society March meeting, Chicago, IL, March 14-18, 2022.
  332. S. Zollner, C. Emminger, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradník, R. Schmidt-Grund, and J. Andreasson, Coherent phonon oscillations and transient critical-point parameters in femtosecond pump-probe ellipsometry spectra, International Symposium on the Physics of Semiconductors and Applications, Jeju, Korea, 17-21 July 2022 (invited, online).
  333. C. Emminger, C. Armenta, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradník, S. Vazquez Miranda, R. Schmidt-Grund, J. Andreasson, and S. Zollner, Coherent phonon oscillations in Ge from femtosecond pump-probe ellipsometry, IEEE Photonics Society Summer Topicals Meeting Series, 11-13 July 2022, Cabo San Lucas, Mexico (invited, withdrawn).
  334. S. Zollner, C. Emminger, S. Espinoza, S. Richter, M. Rebarz, O. Herrfurth, M. Zahradník, R. Schmidt-Grund, and J. Andreasson, Coherent phonon oscillations and transient critical-point parameters in femtosecond pump-probe ellipsometry spectra, DPG Tagung, Regensburg, Germany, 6 September 2022.
  335. Melissa Rivero Arias, Cesy Zamarripa, Jaden Love, Carola Emminger, and Stefan Zollner, Temperature dependence of the mid-infrared dielectric function of InSb from 80 to 800 K, DPG Tagung, Regensburg, Germany, 6 September 2022.
  336. Marko S. Milosavljevic, Rigo A. Carrasco, Alexander Newell, Jaden R. Love, Stefan Zollner, Christian P. Morath, Preston T. Webster, and Shane R. Johnson, Vertical carrier transport in bulk InAsSb and InAs/InAsSb and InGaAs/InAsSb superlattices grown on GaSb substrates is investigated using photoluminescence spectroscopy and magnetoresistance measurements, 36th North American MBE Conference, 18-21 September 2022, Rehoboth Beach, DEL.
  337. Melissa Rivero Arias, Nuwanjula S. Samarasingha, Carola Emminger, and Stefan Zollner, Temperature dependence of the direct band gap of InSb from 80 to 700 K, AVS International Symposium, Pittsburgh, PA, 8 November 2022.
  338. Jaden R. Love, Nuwanjula S. Samarasingha, Carlos Armenta, Stefan Zollner, and H. Kim, Structural Properties and Optical constants of CaF2 at 300 K from 0.03 to 6.5 eV, AVS International Symposium, Pittsburgh, PA, 8 November 2022.
  339. Haley Woolf, Carola Emminger, Carlos Armenta, Stefan Zollner, and Matt Kim, Optical and x-ray characterization of Ge-Sn alloys on GaAs, AVS International Symposium, Pittsburgh, PA, 8 November 2022.
  340. Carlos Armenta, Martin Zahradnik, Carola Emminger, Shirly Espinoza, Mateusz Rebarz, Jakob Andreasson, and Stefan Zollner, Coherent acoustic phonon oscillations in Ge using pump-probe time-resolved spectroscopic ellipsometry, AVS International Symposium, Pittsburgh, PA, 8 November 2022.
  341. Stefan Zollner, Optical properties of infrared detector materials, 5th Tri-Service Workshop on GeSn and GeSiSn, Dayton, OH, 10-11 January 2023.
  342. Yoshitha Hettige, Stefan Zollner, Suyeong Jang, Alexander A. Demkov, and Wente Li, Optical constants and lattice vibrations of bulk SrTiO3 and BaSnO3 on SrTiO3 using spectroscopic ellipsometry from 0.03 to 6.6 eV, American Physical Society March Meeting, Las Vegas, NV, March 6-10, 2023.
  343. Stefan Zollner, Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy M. Zamarripa, and Jaden R. Love, Temperature dependence of the infrared dielectric function and the direct band gap of InSb from 80 to 725 K, American Physical Society March Meeting, Las Vegas, NV, March 6-10, 2023.
  344. Carlos A. Armenta, Martin Zahradnik, Carola Emminger, Shirly Espinoza, Mateus Rebarz, Jakob Andreasson, and Stefan Zollner, Coherent acoustic phonon oscillations in Ge using pump-probe time-resolved spectroscopic ellipsometry, American Physical Society March Meeting, Las Vegas, NV, March 6-10, 2023.
  345. Melissa Rivero Arias, Cesy M. Zamarripa, Jaden R. Love, Carlos A. Armenta, Carola Emminger, Sonam Yadav, and Stefan Zollner, Many-body effects in the mid-infrared dielectric function of InSb from 80 to 800K, DPG Spring Meeting, Dresden, Germany, 28 March 2023.
  346. Stefan Zollner, Spectroscopic ellipsometry studies of optical constants in highly excited semiconductors, DPG Spring Meeting, Dresden, Germany, 30 March 2023 (invited).
  347. Yoshitha Hettige, Stefan Zollner, Suyeong Jang, Agham B. Posadas, Alexander A. Demkov, Optical constants and lattice vibrations of bulk SrTiO3 and BaSnO3 on SrTiO3 using spectroscopic ellipsometry from 0.03 to 6.5 eV, 65th Electronic Materials Conference, Santa Barbara, CA, 28-30 June 2023.
  348. Haley B. Woolf, Carola Emminger, Carlos Armenta, Stefan Zollner, and Matt Kim, Optical and x-ray characterization of Ge-Sn alloys on GaAs, American Vacuum Society, Ohio Chapter Meeting, Dayton, OH, 01 August 2023.
  349. Sonam Yadav, Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy M. Zamarripa, Nuwanjula S. Samarasingha, Jaden R. Love, and Stefan Zollner, Temperature dependence of the infrared dielectric function and the direct band gap of InSb from 25 to 800 K, The 16th International Conference on Mid-IR Optoelectronics: Materials and Devices, Norman, OK, August 6-10, 2023.
  350. Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy Zamarripa, Jaden Love, Nuwanjula S. Samarasingha, Sonam Yadav, and Stefan Zollner, Many-body effects in the mid-infrared dielectric function of InSb from 80 to 800K, 12th Workshop on Spectroscopic Ellipsometry, Prague, Czech Republic, 19-21 September 2023.
  351. Carlos Armenta, Martin Zahradnik, Carola Emminger, Shirly Espinoza, Mateusz Rebarz, Jakob Andreasson, and Stefan Zollner, Coherent acoustic phonon oscillations in Ge using pump-probe time-resolved spectroscopic ellipsometry, 12th Workshop on Spectroscopic Ellipsometry, Prague, Czech Republic, 19-21 September 2023.
  352. Stefan Zollner, Perspective on femtosecond ellipsometry, Satellite Meeting on Time-Resolved Spectroscopic Ellipsometry, 22 September 2023, Prague, Czech Republic (invited).
  353. Stefan Zollner, Carlos A. Armenta, Bridget Rogers, Gordon J. Grzybowski, and Bruce Claflin, Characterization of buffer layers for remote plasma-enhanced chemical vapor deposition of germanium-tin epitaxial layers, ONR 2023 Silicon Germanium Tin (SiGeSn) Workshop, Colorado Springs, CO, 25-26 October 2023.
  354. Carlos Armenta, Trent Johson, Bridget Rogers, Arnold Kiefer, Tim Prusnick, and Stefan Zollner, Molecular beam epitaxy growth of thin Ge0.5Sn0.5 alloy layer on GaSb substrate, ONR 2023 Silicon Germanium Tin (SiGeSn) Workshop, Colorado Springs, CO, 25-26 October 2023.
  355. Sonam Yadav, Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy M. Zamarripa, Nuwanjula S. Samarasingha, Jaden R. Love, and Stefan Zollner, Temperature dependence of the infrared dielectric function and the direct band gap of InSb from 25 to 800 K, ONR 2023 Silicon Germanium Tin (SiGeSn) Workshop, Colorado Springs, CO, 25-26 October 2023.
  356. Carlos A. Armenta, Martin Zahradnik, Mateusz Rebarz, Shirly Espinoza, Saul Vazquez-Miranda, Jakob Andreasson, and Stefan Zollner, Modeling many-body effects in Ge using pump-probe time-resolved spectroscopic ellipsometry, AVS 69th International Symposium & Exhibition, Portland, OR, 5-10 November 2023.
  357. Aaron Lopez Gonzalez, Yoshitha Hettige, Jaden Love, Stefan Zollner, Ekta Bhatia, Tuan Vo, and Satyavolu Papa Rao, Dielectric function of tantalum nitride formed by atomic layer deposition on 300 mm wafers, AVS 69th International Symposium & Exhibition, Portland, OR, 5-10 November 2023.
  358. Yoshitha Hettige, Carlos A. Armenta, Jaden R. Love, Stefan Zollner, and Martin Veis, Temperature dependence of the fine structure of the NiO critical points, AVS 69th International Symposium & Exhibition, Portland, OR, 5-10 November 2023.
  359. Melissa Rivero Arias, Carlos A. Armenta, Carola Emminger, Cesy Zamarripa, Nuwanjula Samarasingha, Jaden Love, Sonam Yadav, and Stefan Zollner, Many-body effects in the mid-infrared dielectric function of InSb from 80 to 800 K, AVS 69th International Symposium & Exhibition, Portland, OR, 5-10 November 2023.
  360. Bridget Rogers, Stefan Zollner, Carlos A. Armenta, Gordon J. Grzybowski, and Bruce Claflin, Characterization of buffer layers for remote plasma-enhanced chemical vapor deposition of germanium-tin epitaxial layers, AVS 69th International Symposium & Exhibition, Portland, OR, 5-10 November 2023.
  361. Stefan Zollner, Carola Emminger, and Jose Menendez, Excitonic absorption in semiconductors with low and high carrier densities, Materials Research Society Fall Meeting, Boston, MA, 26 November to 01 December, 2023 (invited).
  362. Stefan Zollner, Carlos A. Armenta, Bridget Rogers, Gordon Grzybowski, and Bruce Claflin, Characterization of buffer layers for remote plasma-enhanced chemical vapor deposition of germanium-tin epitaxial layers, 49th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-49), Santa Fe, NM, 14-18 January 2024.
  363. Aaron Lopez Gonzalez, Yoshitha Hettige, Jaden Love, Stefan Zollner, Ekta Bhatia, Tuan Vo, Satyavolu Papa Rao, Dielectric Function of Tantalum Nitride Formed by Atomic Layer Deposition on 300 mm Wafers for Josephson junction applications, American Physical Society March Meeting, Minneapolis, MN, 5 March 2024.
  364. Stefan Zollner, Carlos Armenta, and Sonam Yadav, Conduction band nonparabolicity, chemical potential, and carrier concentration of intrinsic InSb as a function of temperature, DPG Spring Meeting, Berlin, Germany, 18 March 2024.
  365. Carlos Armenta, Martin Zahradnik, Carola Emminger, Shirly Espinoza, Mateusz Rebarz, Saul Vazquez-Miranda, Jakob Andreasson, and Stefan Zollner, Modeling many-body effects in Ge using pump-probe femtosecond ellipsometry, IEEE Photonics Society Summer Topicals Meeting Series, Bridgetown, Barbados, 15 July 2024.
  366. Stefan Zollner, Carlos Armenta, and Sonam Yadav, Conduction band nonparabolicity, chemical potential, and carrier concentration of intrinsic InSb as a function of temperature, IEEE Photonics Society Summer Topicals Meeting Series, Bridgetown, Barbados, 15 July 2024.
  367. Stefan Zollner, Relaxation, band filling, and screening in the transient dielectric function of Ge determined with femtosecond ellipsometry (invited), 9th European Light Infrastructure Summer School, Szeged, Hungary, 05 September 2024.
  368. Stefan Zollner, Carlos A. Armenta, Sonam Yadav, Yoshitha Hettige, Jaden R. Love, Haley B. Woolf, Atlantis K. Moses, and Danissa P. Ortega, Optical Spectroscopy of Materials for Mid-Wave Infrared Detector Applications, 7th Tri-Service Workshop on GeSn and SiGeSn, Colorado Springs, CO, 16-17 September 2024.
  369. Stefan Zollner, Matrix elements and excitonic effects in the direct gap absorption of semiconductors (invited), LXVII Congreso Nacional de Física, Ciudad Chihuahua, Mexico, 6-10 October 2024.
  370. Carlos Armenta, Martin Zahradnik, Carola Emminger, Shirly Espinoza, Mateusz Rebarz, Saul Vazquez-Miranda, Jakob Andreasson, and Stefan Zollner, Modeling many-body effects in Ge using pump-probe femtosecond ellipsometry (invited), LXVII Congreso Nacional de Física, Ciudad Chihuahua, Mexico, 6-10 October 2024.
  371. Stefan Zollner, Femtosecond pump-probe ellipsometry and screening of two-dimensional excitons in Ge (invited), Workshop on Quantum Materials from Theory to Practice, Austin, TX, 26 October 2026.
  372. Sonam Yadav, Carlos A. Armenta, Jaden R. Love, Perry C. Grant, and Stefan Zollner, Photoluminescence measurements of Te-doped Gasb from 10 K to 300 K using FTIR spectroscopy, AVS 70th International Symposium & Exhibition, Tampa, FL, 7 November 2024.
  373. Jaden R. Love, Carlos Armenta, Megan Stokey, Mathias Schubert, and Stefan Zollner, The optical constants of calcium fluoride from 0.03-9 eV, AVS 70th International Symposium & Exhibition, Tampa, FL, 7 November 2024.
  374. Yoshitha Hettige, Jaden Love, Carlos Armenta, Atlantis Moses, Jose Marquez, and Stefan Zollner, Temperature dependence of the long-wavelength lattice vibrations of NiO (111) using infrared spectroscopic ellipsometry from 25 K to 500 K, AVS 70th International Symposium & Exhibition, Tampa, FL, 8 November 2024.
  375. Carlos Armenta, Martin Zahradník, Carola Emminger, Shirly Espinoza, Mateusz Rebarz, Saul Vazquez, Jakub Andreasson, and Stefan Zollner, Modeling many-body effects in Ge using pump-probe femtosecond ellipsometry, AVS 70th International Symposium & Exhibition, Tampa, FL, 8 November 2024.
  376. Danissa P. Ortega, Atlantis K. Moses, Carlos A. Armenta, Jaden R. Love, Sonam Yadav, and Stefan Zollner, Infrared ellipsometry on thermally oxidized germanium (100), AVS 70th International Symposium & Exhibition, Tampa, FL, 8 November 2024.
  377. Stefan Zollner, Accurate measurements and models of temperature-dependent optical constants for infrared detector materials (invited), 2024 IEEE Photonics Conference, Rome, Italy, 10-14 November 2024.
  378. Yoshitha Hettige, Stefan Zollner, Adi Pratap Singh, Banadeep Duttam, and Sudeshna Chattopadhyay, Thickness-dependent optical constants of SnO2 thin films on Si grown by atomic layer deposition, 50th Conference on the Physics and Chemistry of Surfaces and Interfaces, 19-23 January 2025, Kailua-Kona, HI.
  379. Jaden R. Love, Carlos A. Armenta, Atlantis K. Moses, Stefan Zollner, Aaron N. Engel, and Christopher J. Palmstrom, Infrared Absorption of α-Sn, 50th Conference on the Physics and Chemistry of Surfaces and Interfaces, 19-23 January 2025, Kailua-Kona, HI.
  380. Danissa P. Ortega, Haley B. Woolf, Atlantis K. Moses, Carlos A. Armenta, Jaden R. Love, Sonam Yadav, Stefan Zollner, Matthew Mirkovich, John Kouvetakis, and Jose Menendez, Optical and structural properties of group-IV oxides produced by rapid thermal oxidation, 50th Conference on the Physics and Chemistry of Surfaces and Interfaces, 19-23 January 2025, Kailua-Kona, HI.
  381. Aaron Lopez Gonzalez, Yoshitha Hettige, Jaden Love, Stefan Zollner, Ekta Bhatia, Tuan Vo, and Satyavolu Papa Rao, Dielectric function of tantalum nitride formed by atomic layer deposition on 300 mm wafers for Josephson junction applications, APS Global Physics Summit, March 16-21, 2024, Anaheim, CA.
  382. Stefan Zollner, Accurate measurements of optical constants using temperature-dependent ellipsometry and comparison with k⋅p theory (plenary), 10th International Conference on Spectroscopic Ellipsometry, Boulder, CO, 8-13 June 2025.

Invited Research Presentations (at institutions):